Patents Assigned to Amer-Soi
  • Patent number: 5576680
    Abstract: The present invention discloses an inductive circuit. The inductive circuit is fabricated on a semiconductor chip including a substrate layer and a dielectric layer. The inductive circuit includes an inductive core composed of high magnetic susceptible material (HMSM) surrounded by an dielectric layer. The dielectric layer which surrounds the inductive core is further surrounded by a conductive line which includes the bottom conductive lines the conductive lines in the `vias` through the surrounding dielectric layer and the top conductive lines. The conductive lines are patterned by employing IC fabrication processes. Thus the inductive core, the dielectric layer surrounding the inductive core, and the surrounding conductive line form an inductive circuit and the inductive circuit is formed on the semi-conductor chip which includes the substrate a layer and a dieletric layer.
    Type: Grant
    Filed: March 1, 1994
    Date of Patent: November 19, 1996
    Assignee: Amer-Soi
    Inventor: Peiching Ling