Abstract: Methods, burner, apparatuses, and systems are provided for controlling a velocity of a jet of gas exiting a burner when the gas is heated or not and at a corresponding second higher temperature or lower first temperature. Through the use of a temperature-sensitive magnetic valve, the flow of a gas can be redirected to maintain velocity of the gas as delivered to a combustion chamber based on the temperature of the gas. The temperature-sensitive magnetic valve can redirect flow of the gas based on the magnetic state of a ferromagnetic material. The state of the temperature-sensitive magnetic valve changes based on the temperature of the gas to maintain the velocity of the gas delivered through an outlet of the burner to the combustion chamber. Thus, heated gases and standard temperature gases can be delivered at approximately equal velocities thus maintaining flame size and shape.

Abstract: Silicon nitride plasma etching processes are disclosed that minimize the SiN roughness layer on a substrate having a SiN layer thereon by simultaneously introducing an oxidizer at a predetermined flow rate and an etch gas into a plasma reaction chamber containing the substrate. The etch gas has the formula CxHyFz, wherein x is 2-5, z is 1 or 2, 2x+2=y+z, and a fluorine atom is located on a terminal carbon atom of the etch gas.

Abstract: A radiative recuperator preheats oxidant and/or fuel for combustion at one or more burners of a furnace. The recuperator includes a duct, at least portions of which comprise a material having a thermal conductivity of greater than 1 W/(m·K), preferably greater than 3 W/(m·K), that receives hot flue gas produced by the burner(s). The duct radiatively transfers heat to oxidant or fuel (for preheating) flowing through one or more metallic pipes disposed in between the duct and an insulating wall.

Abstract: Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Methods of using Si-containing film forming compositions to deposit silicon-containing films using vapor deposition processes are disclosed. The disclosed Si-containing film forming composition comprises an amino(bromo)silane precursor having the formula: SiHxBry(NR1R2)4?x?y wherein x=0, 1 or 2; y=1, 2 or 3; x+y<4; each R1 and R2 is independently selected from C1-C6 alkyl, aryl, or hetero group; and R1 and R2 may be joined to form a cyclic nitrogen-containing heterocycle. The disclosed Si-containing film forming compositions include an amino(bromo)silane precursor selected from the group consisting of SiH2Br(NEt2), SiH2Br(N(iPr)2), SiH2Br(N(iBu)2) and SiBr(NMe2)3.

Abstract: Disclosed are methods for operating a glass furnace, the method comprises the steps of feeding a non-pre-reformed hydrocarbon fuel gas stream to a pre-reformer forming a pre-reformed hydrocarbon fuel gas stream, feeding the pre-reformed hydrocarbon fuel gas stream to burners of the furnace, combusting oxidant and the pre-reformed hydrocarbon fuel gas with the burners to produce flue gas, heating air through heat exchange with the flue gas at a recuperator, and transferring heat from heated air to pre-reformer tubes of the pre-reformer. A glass furnace system is also disclosed.

Abstract: Disclosed are Si-containing film forming composition comprising organodisilane precursors. The organodisilane precursors have the formula (E-(CR)n-E)SiH2—SiHx(E-(CR)n-E)3-x, wherein x is 2 or 3; each n is independently 1 or 3; each (E-(CR)n-E) group is a monoanionic bidentate ligand bonding to the Si through each E; each E is independently chosen from NR, O or S; and each R is independently selected from the group consisting of H, a C1 to C6 alkyl group, and a C3-C20 aryl or heterocycle group. Also disclosed are methods of synthesizing the Si-containing film forming compositions and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Abstract: Disclosed are Si-containing film forming compositions comprising carbosilane substituted amine precursors. The carbosilane substituted amine precursors have the formula (R1)aN(—SiHR2—CH2—SiH2R3)3?a, wherein a=0 or 1; R1 is H, a C1 to C6 alkyl group, or a halogen; R2 and R3 is each independently H; a halogen; an alkoxy group having the formula OR?, wherein R? is an alkyl group (C1 to C6); or an alkylamino group having the formula NR?2, wherein each R? is independently H, a C1-C6 alkyl group, a C1-C6 alkenyl group, or a C3-C10 aryl or heterocycle group. Also disclosed are methods of synthesizing the carbosilane substituted amine precursors and their use for deposition processes.

Abstract: Disclosed are Si-containing thin film forming precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel-type devices, refractory materials, or aeronautics.

Abstract: Replacement chemistries for the cC4F8 passivation gas in the Bosch etch process and processes for using the same are disclosed. These chemistries have the formula CxHyFz, with 1 ?x<7, 1?y?13, and 1?z?13. The replacement chemistries may reduce RIE lag associated with deep silicon aperture etching.

Abstract: Temperature overshoot of internal components of a counter-flow shell and tube heat heat exchange may be reduced or avoided by adjusting the degree to which a tube-side fluid partially bypasses the heat exchanger.

Abstract: Disclosed are hexacoordinate silicon-containing precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes for manufacturing semiconductors, photovoltaics, LCD-TFT, flat panel type devices, refractory materials, or aeronautics. The hexacoordinate silicon-containing molecule have the following formula: (I), wherein each L1, L2, L3 and L4 is independently selected from oxygen or nitrogen atoms; L1 and L2 are joined together via a carbon bridge having one to three carbon atoms; L3 and L4 are joined together via a carbon bridge having one to three carbon atoms; L1, L2 and the carbon bridge forming a monoanionic ligand bonded to silicon; and L3, L4 and the carbon bridge form a monoanionic ligand bonded to silicon.

Abstract: A cylinder transport and mounting system is provided. This system includes a object mounting yoke, and at least one bracket selected from the group consisting of a conveyance mounting bracket, and user mounting bracket, wherein the cylinder mounting yoke is configured to attach securely to a cylinder and to detachably interface with the conveyance mounting bracket and/or to detachably interface with the user mounting bracket.

Abstract: Disclosed are amino(iodo)silane precursors, methods of synthesizing the same, and methods of using the same to deposit silicon-containing films using vapor deposition processes. The disclosed amino(iodo)silane precursors include SiH2I(N(iPr)2) or SiH2I(N(iBu)2).

Abstract: Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in Si-containing layers on a substrate and plasma etching methods of using the same. The plasma etching compounds may provide improved selectivity between the Si-containing layers and mask material, less damage to channel region, a straight vertical profile, and reduced bowing in pattern high aspect ratio structures.

Abstract: Atomic layer or cyclic plasma etching chemistries and processes to etch films are disclosed. Films include Si, Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof.

Abstract: The invention may be broadly defined as the addition of Argon to FFPE procedures as an RNA stabilizing agent. Argon is an inert gas from the Noble gas group with low saturation concentrations in water. It is therefore highly surprising that Argon would have any effect on RNA stability in the presence of Formalin, or any other chemical. This property of Argon appears to be specific in that other inert gases fail to show any RNA stabilizing effect.

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract: Disclosed are methods of synthesizing an amino(halo)silane comprising the step of reacting a halosilane having the formula SiaHbXc with an aminosilane having the formula SidHe(NR1R2)f to produce the amino(halo)silane having the formula SiwHxXy(NR1R2)z, wherein X=Br or I; each R1 and R2 is independently selected from a C1-C10 alkyl, aryl, or hetero group; a, d, and w independently=1 to 4; b+c=2a+2; b=1 to 2a+1; c=1 to 2a+1; e+f=2d+2; e=1 to 2d+1; f=1 to 2d+1; x+y+z=2w+2; and R1 and R2 may be joined to form a nitrogen-containing heterocycle.