Abstract: The present invention provides for a process for preserving biological material. The process comprises subjecting the biological material to a fixation process and then packaging the biological material in a container under a controlled atmosphere of noble gas. In the process, the controlled atmosphere of noble gas utilized comprises one or more noble gases selected from argon, xenon, helium, neon, krypton and radon. The process optionally also utilizes one or more additional gases selected from nitric oxide, hydrogen, hydrogen sulfide, carbon monoxide, carbon dioxide, nitrogen and oxygen. This process allows for the long term storage of the biological material.

Abstract: A jet of gas injected from a lance is fluidically deviated with a gas flowing in either the same or opposite direction as the jet of gas. The gas used to fluidically deviate the jet is the same as or different from the gas in the jet.

Abstract: The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.

Abstract: A method for sanitation and preservation of foodstuffs includes the following steps. A container containing a foodstuff is provided. A non-thermal plasma is introduced to an interior of the container. The container is sealed.

Abstract: The present invention provides molecules useful for aluminum implant in semiconductor materials. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.

Abstract: Scaling is controlled in a cooling water system with CO2 based upon measurements of the cooling water's pH, alkalinity and Ca2+ concentration.

Abstract: Methods of purifying H2Se by removing H2S and/or H2O are disclosed. The amount of H2S in the H2Se-containing gas is reduced below 10 ppmv by passing the H2Se-containing gas through an AW-500 molecular sieve. H2S and H2O are removed by passing H2Se through a 4 A molecular sieve and subsequently passing H2Se through an AW-500 molecular sieve.

Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: Disclosed are non-pyrophoric mixtures of silicon compounds and solvents. Also disclosed are methods of stabilizing the pyrophoric silicon compounds (precursors). The non-pyrophoric mixtures may be used to deposit silicon-containing layers using vapor deposition methods such as chemical vapor deposition or atomic layer deposition.

Abstract: Disclosed are precursors having a pyrrolecarbaldiminates ligand and methods of synthesizing the same. The pyrrolecarbaldiminates ligand may be substituted.

Abstract: Methods and compositions for depositing a film on one or more substrates include providing a reactor with at least one substrate disposed in the reactor. At least one metal precursor are provided and at least partially deposited onto the substrate to form a metal-containing film.

Abstract: Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-?-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set temperature and pressure, and the precursor is contacted with the substrate to form a metal-containing film on the substrate.

Abstract: The present invention provides molecules with high carbon content for Carbon-containing species implant in semiconductor material. The molecules can be used in various doping techniques such as ion implant, plasma doping or derivates methods.

Abstract: Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor compounds comprising rare earth-containing compounds using deposition methods such as chemical vapor deposition or atomic layer deposition. The disclosed precursor compounds include a cyclopentadienyl ligand having at least one aliphatic group as a substituent and an amidine ligand.

Abstract: Disclosed are methods of purifying H2Se by removing H2S and H2O.

Abstract: An improved reactor tube which includes a reactor tube, wherein the reactor tube is at least partially filled with at least one porous media catalyst, and at least one shape memory alloy element located within the reactor tube, wherein; at a first temperature, the shape memory alloy element has a first configuration, at a second temperature, the shape memory alloy element has a second configuration is provided.

Abstract: The present invention provides for an integrated valve regulator assembly that comprises an integral body having a base portion that includes an axis for mounting on and coaxially with the neck portion of a pressurized source vessel and an assembly outlet, a defined internal passage in the integral body that extends through and between the base portion of the integral body and the assembly outlet, a sub-atmospheric pressure regulator assembled within the integral body of the integrated valve regulator assembly, an isolation valve positioned within the defined internal passage of the integral body and located downstream from and in communication with the sub-atmospheric pressure regulator, and a filling port disposed between the axis for mounting on and coaxially with the neck portion of the pressurized source vessel and the sub-atmospheric pressure regulator.

Abstract: An enclosure is filled with a filling gas according to the disclosed method. An enclosure is provided having an interior, a width, a height, a thickness, and fluid filling and exit holes fluidly communicating with the interior. Filling of the enclosure is commenced by directing a flow of the filling gas at a filling flow rate into the fluid filling hole. An oxygen concentration of gas exiting the fluid exit hole is sensed. The filling of the enclosure is stopped when the sensed oxygen concentration reaches a threshold concentration, wherein the threshold oxygen concentration and/or the filling flow rate are selected by a Decision Support Tool based upon the width, height, and/or the thickness.

Abstract: An enclosure is filled with a filling gas according to the disclosed method. An enclosure is provided having an interior, a width, a height, a thickness, and fluid filling and exit holes fluidly communicating with the interior. Filling of the enclosure is commenced by directing a flow of the filling gas at a filling flow rate into the fluid filling hole. An oxygen concentration of gas exiting the fluid exit hole is sensed. The filling of the enclosure is stopped when the sensed oxygen concentration reaches a threshold concentration, wherein the threshold oxygen concentration and/or the filling flow rate are selected by a Decision Support Tool based upon the width, height, and/or the thickness.

Abstract: The present invention provides a process for the deposition of a iridium containing film on a substrate, the process comprising the steps of providing at least one substrate in a reactor; introducing into the reactor at least one iridium containing precursor having the formula: XIrYA, wherein A is equal to 1 or 2 and i) when A is 1, X is a dienyl ligand and Y is a diene ligand; ii) when A is 2, a) X is a dienyl ligand and Y is selected from CO and an ethylene ligand, b) X is a ligand selected from H, alkyl, alkylamides, alkoxides, alkylsilyls, alkylsilylamides, alkylamino, and fluoroalkyl and each Y is a diene ligand, and c) X is a dienyl ligand and Y is a diene ligand; reacting the at least one iridium containing precursor in the reactor at a temperature equal to or greater than 100° C.; and depositing an iridium containing film formed from the reaction of the at least one iridium containing precursor onto the at least one substrate.