Abstract: A method for producing a high yield of free-flowing alpha-phase single crystal silicon carbide platelets. Through the use of various parameter and composition values, the size range of the platelets can be controlled. For example, small size platelets can be prepared by first heating a mixture of finely divided silicon dioxide and carbon to a temperature of about 1600.degree..+-.100.degree. C. for a duration of about 5-10 hours to produce a silicon carbide product, referred to as a "prefire" product. This prefire product is mixed with a platelet-enhancing material in the form of powdered carbon or aluminum metal (and mixtures thereof) and then further heated to about 1900.degree.-2400.degree. C. for 2-10 hours to make the platelets. Also, small platelets can be made by substituting silicon carbide whiskers for the intermediate prefire material and adding a platelet enhancing material.

Abstract: A process for the manufacture of single crystal titanium nitride whiskers having uniform diameters and lengths suitable for use in the reinforcing of many matrix materials. The process is carried out by rapidly heating a mixture of titanium dioxide, fibrous carbon and a catalyst selected from individual combinations of cobalt, nickel, magnesium and calcium, for example. This mixture of solids is maintained in a closed container and is rapidly heated to a temperature of about 1300.+-.100 degrees C. for about 1 hour. During this heating a halogen, preferably a chlorine-containing gas, in conjunction with nitrogen is passed into the container whereby the titanium dioxide is converted to titanium nitride in the form of single crystal whiskers. These whiskers have a uniform diameter of about 0.5 to about 1 micron and average lengths of about 30-60 microns. The exterior surface is particularly amenable to bonding to the matrix material to which these whiskers are added for strength.

Abstract: A method for achieving a high yield of beta silicon carbide whiskers. According to this method, very small (e.g., 0.002 microns) fluffy silicon dioxide particles having a very large surface area (e.g., 200 m.sup.2 /g) are mixed with a fluffy carbonized material. These materials have a void volume of about 40 percent or greater. The silicon dioixde is present in an amount by weight approximately twice that of the carbon constituent. This mixture is heated, preferably in the presence of a catalyst (e.g., anhydrous boric oxide and powdered aluminum metal) at a temperature of about 1650.degree..+-.300.degree. C. for a time of one-half to four hours. During this heating the gaseous reaction products are maintained at a steady state as with a low flow of argon gas through the furnace. The resultant SiC whiskers have a diameter in the range of about 0.5 to 10 micrometers, and a length of about 10 to about 1000 micrometers.