Patents Assigned to American Xtal Technology
  • Charge for vertical boat growth process and use thereof
    Patent number: 6045767
    Abstract: In vertical boat growth of GaAs single crystal ingots, graphite powder, in selected amounts, is included in the charge to establish directly related planned target electrical characteristics in the as grown ingots. The electrical characteristics correspond to concentrations of carbon in the as grown ingots.
    Type: Grant
    Filed: November 21, 1997
    Date of Patent: April 4, 2000
    Assignee: American Xtal Technology
    Inventors: Xaio Liu, Meng Zhu
  • Single crystal wafers
    Patent number: 5792566
    Abstract: Improved commercial single crystal wafers (250), as shipped to end users form a full circle, and comprise a "stress concentration notch" (172) which accurately defines a desired cleavage plane. The stress concentration notch is introduced into the wafers in bulk by means of a properly oriented cut along the length of a single crystal ingot, after machining the ingot to the desired end product diameter, and prior to sawing the ingot into slices. The stress concentration notch uniquely defines the first and second faces of the wafer.
    Type: Grant
    Filed: July 2, 1996
    Date of Patent: August 11, 1998
    Assignee: American Xtal Technology
    Inventors: Gary Shen-Cheng Young, Shan-Xiang Zhang