Abstract: An apparatus and method for hydrogenating a sample, such as a semiconductor wafer. The invention utilizes a top electrode comprising a UV-transparent dielectric and a metal contact to provide an electric field to the sample while the sample is irradiated with UV light and hydrogenated with a hydrogenating gas or gasses. The field may be applied to the sample at a number of different pressures, temperatures and concentrations of gas to manipulate the rate and type of hydrogenation. Further, the method of hydrogenating the sample may be used in conjunction with masking and etching techniques.

Abstract: The invention is directed to ion implantation. Ion implantation is a process whereby energetic ions are used to uniformly irradiate the surface of a material—typically a semiconductor wafer. Either atomic or molecular ions are created in an ion source and then extracted for analysis (e.g. by magnetic separation) to ensure the purity of the ion beam. Post-analysis acceleration and scanning of the beam is done prior to sample irradiation. Each dopant-type acts, in general, to increase the conductivity of the silicon.

Abstract: An apparatus and method for hydrogenating a sample, such as a semiconductor wafer. The invention utilizes a top electrode comprising a UV-transparent dielectric and a metal contact to provide an electric field to the sample while the sample is irradiated with UV light and hydrogenated with a hydrogenating gas or gasses. The field may be applied to the sample at a number of different pressures, temperatures and concentrations of gas to manipulate the rate and type of hydrogenation. Further, the method of hydrogenating the sample may be used in conjunction with masking and etching techniques.

Abstract: An apparatus and method for improving the electrical conductivity of a thermoelectric material, particularly a material comprising polysilicon nanowires. The method comprises hydrogenation of the device to improve the electrical conductivity of the device with negligible change to the thermal conductivity. Hydrogenation of the thermoelectric device may be accomplished using several techniques, including UV-assisted hydrogenation in a vacuum chamber.

Abstract: Apparatus and method are provided for hydrogenating semiconductor or other materials by ultraviolet (UV) radiation in the presence of hydrogen. Hydrogen uptake may be optimized by selection of temperature and wavelength of the UV radiation. Patterned areas may be selectively hydrogenated, such as mesas in Avalanche Photodiode Arrays.

Abstract: Apparatus and method to improve the operating parameters of HgCdTe-based optoelectric devices by the addition of hydrogen to passivate dislocation defects. A chamber and a UV light source are provided. The UV light source is configured to provide UV radiation within the chamber. The optoelectric device, which may comprise a HgCdTe semiconductor, is placed into the chamber and may be held in position by a sample holder. Hydrogen gas is introduced into the chamber. The material is irradiated within the chamber by the UV light source with the device and hydrogen gas present within the chamber to cause absorption of the hydrogen into the material.

Abstract: A method is provided for measuring defects in semiconductor materials. In one embodiment the method includes placing deuterium in the material and directing an ion beam onto the material to cause a nuclear reaction with the deuterium. Products of the nuclear reaction are analyzed (NRA) to measure the concentration of defects. In other embodiments, a spectroscopic technique is used to detect the deuterium taggant. Lattice defect or total defect occurrences can be selected by selecting the method of placing deuterium in the sample. Defect concentration vs. depth below the surface of material can be determined by varying the energy of the ion beam or by measuring energy profiles of products of the nuclear reaction. The method may be applied to wafers, pixels or other forms of semiconductor materials and may be combined with X-ray analysis of elements on the material.