Abstract: The object of this invention is to provide a high-output type nitride light emitting device. The nitride light emitting device comprises an n-type nitride semiconductor layer, a p-type nitride semiconductor layer and an active layer therebetween, wherein the light emitting device comprises a gallium-containing nitride semiconductor layer prepared by crystallization from supercritical ammonia-containing solution in the nitride semiconductor layer.

Abstract: The invention relates to new improvements in a process for crystal growth in the environment of supercritical ammonia-containing solution, which are based on use of specific azide mineralizers and result in the improved bulk Group XIII element nitride monocrystals, in particular balk monocrystalline gallium-containing nitride, intended mainly for variety of nitride-based semiconductor products such as various opto-electronic devices. The invention further relates to a mineralizer used for supercritical ammonia-containing solution which comprises at least one compound selected from the group consisting of LiN3, NaN3, KN3, and CsN3.

Abstract: The object of this invention is to provide a high-output type nitride semiconductor laser device comprising a pair of end faces of a resonator. The nitride semiconductor laser device comprises an n-type nitride semiconductor layer or layers, a p-type nitride semiconductor layer or layers and a resonator, provided with an active layer comprising nitride semiconductor containing In therebetween, wherein at least light emitting end face of the resonator is covered with an end face film of single crystal AlxGa1-xN (0?x?1) formed at a low temperature not causing damage to the active layer comprising nitride semiconductor containing In.