Abstract: Textured semi-conductor devices, such as macro textured buried-contact solar cells, are produced with special front contact trenches to increase efficiency and decrease costs. In order to produce the front contact trenches, front channels and narrower metallization grooves are cut in the semi-conductor body. The front contact trenches are plated to form attractive conductive buried contacts comprising flush metallization fingers and bus bars.

Abstract: High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Abstract: Attractive multi-junction solar cells and single junction solar cells with excellent conversion efficiency can be produced with a microcrystalline tunnel junction, microcrystalline recombination junction or one or more microcrystalline doped layers by special plasma deposition processes which includes plasma etching with only hydrogen or other specified etchants to enhance microcrystalline growth followed by microcrystalline. nucleation with a doped hydrogen-diluted feedstock.

Abstract: High quality, stable photovoltaic and electronic amorphous silicon devices which effectively resist light-induced degradation and current-induced degradation, are produced by a special plasma deposition process. Powerful, efficient single and multi-junction solar cells with high open circuit voltages and fill factors and with wider bandgaps, can be economically fabricated by the special plasma deposition process. The preferred process includes relatively low temperature, high pressure, glow discharge of silane in the presence of a high concentration of hydrogen gas.

Abstract: A thin-film semiconductor device comprising a substrate and a front contact layer disposed on said substrate including a plurality of segments separated by first scribe lines, a plurality of the segments forming a submodule, and at least one of the submodules forming a module. A bus is provided for interconnecting two or more of the submodules in parallel with each other. A thin film of a semiconductor material is disposed on the front contact layer and a back contact layer disposed on the thin film of semiconductor material. The back contact layer is scribed along second scribe lines corresponding to and adjacent the first scribe lines. An interconnection is provided for interconnecting adjacent areas of the rear and back contact layers.

Abstract: High-quality photovoltaic devices can be produced while lowering manufacturing costs by the inventive process. In the process, solar cells are manufactured, connected, and placed on one or more curable plastic sheets at a solar cell manufacturing plant. The plastic sheets are then heated at a sufficient temperature to bond the plastic sheets to the solar cells without a substantial amount of curing and polymerization of the plastic sheet. The plastic sheet is then cooled. The plastic sheet can be coated with a protective water-resistant coating. The partially cured photovoltaic subassembly is subsequently shipped to a manufacturing facility, such as a glass plant or automobile plant, where it is contacted with a glass support member providing a superstrate or a substrate. The plastic sheet of the photovoltaic subassembly is then fully cured, polymerized, and bonded to the glass superstrate or substrate.

Abstract: The present invention relates to the production of hydrogen fluoride dopant source gases for use in the production of conductive coatings on a substrate. More specifically, a fluorocarbon source gas is decomposed in the presence of oxygen to yield HF which is passed to a deposition furnace wherein a fluoride doped metal oxide coated glass substrate is prepared.