Abstract: Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g., wafer) with a positive or negative charge. The layer may retain the charge to improve operation of the solar cell. The charged layer may include any suitable dielectric material capable of retaining either a negative or a positive charge. Systems and methods of the present invention permit in-situ charging of a layer. Charging of a layer may be accomplished during or after deposition of the layer including after completing the whole solar cell process, in other words, on a finished cell.

Abstract: Embodiments of the present invention help prevent Potential-Induced Degradation (PID) in solar cell modules. A solar cell module according to one embodiment of the present invention comprises a glass sheet, a frame covering at least a portion of the glass sheet, a plurality of solar cells at least partially covered by the glass sheet, and a hydrophobic coating covering at least a portion of the frame and at least a portion of the glass sheet.

Abstract: Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g., wafer) with a positive or negative charge. The layer may retain the charge to improve operation of the solar cell. The charged layer may include any suitable dielectric material capable of retaining either a negative or a positive charge. Systems and methods of the present invention permit in-situ charging of a layer. Charging of a layer may be accomplished during or after deposition of the layer including after completing the whole solar cell process, in other words, on a finished cell.

Abstract: Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g., wafer) with a positive or negative charge. The layer may retain the charge to improve operation of the solar cell. The charged layer may include any suitable dielectric material capable of retaining either a negative or a positive charge. Systems and methods of the present invention permit in-situ charging of a layer. Charging of a layer may be accomplished during or after deposition of the layer including after completing the whole solar cell process, in other words, on a finished cell.

Abstract: Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g., wafer) with a positive or negative charge. The layer may retain the charge to improve operation of the solar cell. The charged layer may include any suitable dielectric material capable of retaining either a negative or a positive charge. Systems and methods of the present invention permit in-situ charging of a layer. Charging of a layer may be accomplished during or after deposition of the layer including after completing the whole solar cell process, in other words, on a finished cell.

Abstract: Systems and methods of the present invention can be used to charge a charge-holding layer (such as a passivation layer and/or antireflective layer) of a solar cell with a positive or negative charge as desired. The charge-holding layer(s) of such a cell can include any suitable dielectric material capable of holding either a negative or a positive charge, and can be charged at any suitable point during manufacture of the cell, including during or after deposition of the passivation layer(s).

Abstract: In the production of silicon solar cells wherein the process includes a dopant diffusion to form a pn junction, a back surface field layer, or a front surface field layer, resulting in the formation of a doped glass surface, a HF vapor etch is utilized to remove the doped glass layer and expose the wafer surface. The exposed surface is subjected to an oxygen treatment for predetermined times and temperatures to alter the surface state. The HF vapor etch followed by the oxygen treatment, or chemical oxidation, results in significant improvement in solar cell electrical properties.

Abstract: Systems and methods of the present invention can be used to charge a charge-holding layer (such as a passivation layer and/or antireflective layer) of a solar cell with a positive or negative charge as desired. The charge-holding layer(s) of such a cell can include any suitable dielectric material capable of holding either a negative or a positive charge, and can be charged at any suitable point during manufacture of the cell, including during or after deposition of the passivation layer(s). A method according to one aspect of the invention includes disposing a solar cell in electrical communication with an electrode inside a chamber. The solar cell includes an emitter, a base, a first passivation layer adjacent the emitter, and a second passivation layer adjacent the base. Gas is injected into the chamber and a plasma (with photons having an energy level of at least about 3.1 eV) is generated using the gas.

Abstract: An apparatus for assisting the loading of a plurality of wafer boats into a multi-level wafer boat loading system (1) includes a vertical elevator mechanism (10) attached to the wafer boat loading system (1). A vertically movable horizontal wafer boat platform (181B) is attached to a vertically movable carriage (31) included in the elevator mechanism and vertically movable along a linear track (30 therein. A control system (25) associated with the vertical elevator mechanism includes a processor for executing a stored program which stores information representing a plurality of elevation levels the plurality of cantilever paddles (5), respectively, and which responds to a selection signal corresponding to manual selection of one of the elevator levels to control a drive mechanism (22,27) which moves the wafer boat support platform (18B) from an initial position to the selected elevator level.

Abstract: An apparatus for automatically and simultaneously loading a single long wafer boat or a plurality of wafer boats onto a cantilever paddle includes a stationary first track aligned with a first opening of a diffusion furnace and a first carriage moveable on the first track. The first carriage supports a cantilever paddle. A first vertical translation mechanism includes a first stationary part and a first vertically moveable support. A second vertical translation mechanism includes a second stationary part and a second vertically moveable support. A first horizontal translation mechanism includes a first base supported by the first vertically moveable support and a first horizontally moveable arm supported by the first base. A second horizontal translation mechanism includes a second base supported by the second vertically moveable support and a second horizontally moveable arm supported by the second base.

Abstract: A method of ashing or cleaning a wafer, including introducing oxygen gas into a reaction chamber having therein a semiconductor wafer to be ashed or cleaned, producing light of wavelength less than 190 nanometers by means of a first excimer lamp, and directing the light into the oxygen gas, causing generation of ozone gas. Light of wavelength greater than 190 nanometers is produced by means of a second excimer lamp and directed that light into the ozone gas, causing generation of an oxygen radical having a high absorption coefficient. Gas including the oxygen radical is passed along a surface of the wafer, causing degeneration of organic material thereon.

Abstract: A system for automatic loading of wafer boats onto a cantilever paddle for insertion of the wafer boats into a furnace tube includes an end effector carriage moving on a track and supporting an end effector having spaced, parallel pads to engage opposed outer side portions of a wafer boat. The end effector receives a wafer boat from a robotic arm of an elevator. The robotic arm moves transversely relative to the track to position the wafer boat over the track on which the paddle carriage moves. The end effector carriage moves the end effector pads under the wafer boat, lifts it from a pair of elevator tines, moves the wafer boat over a desired part of the paddle, and lowers the wafer boat onto the paddle. The end effector carriage then returns the end effector to an initial location.

Abstract: A system for automatic loading of wafer boats onto a cantilever paddle for insertion of the wafer boats into a furnace tube includes an end effector carriage moving on a track and supporting an end effector having spaced, parallel pads to engage opposed outer side portions of a wafer boat. The end effector receives a wafer boat from a robotic arm of an elevator. The robotic arm moves transversely relative to the track to position the wafer boat over the track on which the paddle carriage moves. The end effector carriage moves the end effector pads under the wafer boat, lifts it from a pair of elevator tines, moves the wafer boat over a desired part of the paddle, and lowers the wafer boat onto the paddle. The end effector carriage then returns the end effector to an initial location.

Abstract: In a photo-CVD system, ultraviolet light is introduced into a reaction chamber from light emitting elements of ultraviolet light sources, through transparent bulb surfaces thereof, and through elongated light pipes in a sealed wall bounding the reaction chamber. This prevents molecules of reactant gas in the reaction chamber from reaching and being deposited on the transparent bulb surfaces, and thereby prevents buildup of such reactant molecules from occurring and impeding flow of ultraviolet light into the reaction chamber.

Abstract: A photo-assisted chemical vapor deposition system includes a reaction chamber, a susceptor in the reaction chamber supporting a wafer, a source for introducing reactant gas into the reaction chamber through an inlet port, and a cover positioned in sealed relationship to the housing and partially bounding the reaction chamber, the cover including a plurality of elongated light pipe openings each having a length comparable to the thickness of a boundary layer of the reactant gas and a diameter-to-length ratio small enough to maintain one-dimensional purge gas flow through the light pipe openings. A plurality of transparent windows are disposed in sealed relationship with the cover and bound an outer end of each of the light pipe openings. Ultraviolet light is introduced through the light pipe openings, which also provide a thick gas layer through which reactant species of the reactant gas must diffuse to reach the window surface.

Abstract: An apparatus for loading semiconductor wafers into a cantilever diffusion tube includes a cantilever paddle supporting a boatload of wafers. The paddle is moved into alignment with the open end of the cantilever diffusion tube. The open end portion of cantilever diffusion tube is moved to surround the paddle and boat load of wafers. The paddle is lowered slightly, causing the boat load of wafers to be supported on an inside surface of the cantilever diffusion tube and providing clearance around the paddle. The cantilever tube is withdrawn from the paddle, which then is withdrawn from the path of the cantilever diffusion tube. The cantilever tube and the boatload of wafers is moved into the hot zone of the furnace. After a heat treating operation, the cantilever diffusion tube is withdrawn from the furnace, and the reverse operation is performed to unload the boatload of wafers.