Abstract: The present invention provides a partially bonding structure for a Polymer and a chip, comprising a substrate, a metal layer and a Polymer. The Polymer includes the characters, such as high uniformity, good flexibility, different hydrophilicity, low stress, low melting point, and high hermeticity, to be applied to the standard semiconductor manufacture process. The Polymer is to accomplish good uniformity in spin-coating or chemical vapor deposition (CVD) method at low temperature. The metal layer or the extremely thin metal layer of the circuit of the substrate is winded to surround the lateral side of the substrate to increase the current density. And next, it is partially heated to generate an adequate temperature to form the hermetic bonding of the Polymer and the substrate instantly. As a result, the partial heating effect can be accomplished without affecting the characters of the circuit of the chip.