Abstract: A full-bridge class-D amplifier circuit comprises first through fourth power devices. First conduction terminals of the first and third power devices are coupled to a first power supply voltage, and second conduction terminals of the second and fourth power devices are coupled to a second power supply voltage. A second conduction terminal of the first power device and a first conduction terminal of the second power device are coupled to a first amplifier output. A second conduction terminal of the third power device and a first conduction terminal of the fourth power device are coupled to a second amplifier output. Left and right driver devices respectively disposed adjacent to left and right sides of the first power device have outputs respectively coupled to left and right control terminals respectively disposed on the left and right sides of the first power device.

Abstract: A tub of a semiconductor device includes a cool zone with a first projected operating temperature and a hot zone with a second projected operating temperature greater than the first projected operating temperature. A design parameter has a first value in the cool zone and a second value different from the first value in the hot zone. The difference configures the tub to dissipate less heat in the hot zone during operation of the semiconductor device than would be dissipated if the first and second values were equal. The design parameter may be, for example, a tub width, a source structure width, a JFET region width, a channel length, a channel width, a length of a gate, a displacement of a center of the gate relative to a center of a JFET region, a dopant concentration, or a combination thereof.

Abstract: A semiconductor device comprises a semiconductor die having a first region and a second region, wherein an operating temperature of the second region is lower than an operating temperature of the first region. A plurality of first tubs are respectively disposed in the first region, the second region, or both. The semiconductor device further comprises a power device comprising a plurality of power device cells, and a diode having a plurality of diode cells. The power devices cells are disposed within tubs or portions of tubs that are in the first region, and the diode cells are disposed within tubs or portions of tubs that are in the second region. The power device may comprise a vertical metal oxide semiconductor field effect transistor (MOSFET), and the diode may comprise a vertical Schottky barrier diode (SBD).

Abstract: A semiconductor device comprises a substrate, a semiconductor layer formed on the substrate; and a high-voltage termination. The high-voltage termination includes a plurality of floating field rings, a deep trench and a dielectric material is disposed within the deep trench. The plurality of floating field rings are formed in the semiconductor layer and respectively disposed around a region of the semiconductor layer. The deep trench is formed in the semiconductor layer and concentrically disposed around an outermost floating field ring of the plurality of floating field rings. The high-voltage termination may also include a field plate disposed over the floating field rings, the deep trench, or both.

Abstract: A Field Effect Transistor (FET) may include a semiconductor substrate having a first conductivity type, a semiconductor layer of the first conductivity type formed over the substrate, and a pair of doped bodies of a second conductivity type opposite the first conductivity type formed in the semiconductor layer. A trench filled with a trench dielectric is formed within a region between the doped bodies. The FET may be a Vertical Metal-Oxide-Semiconductor FET (VMOSFET) including a gate dielectric disposed over the region between the doped bodies and the trench, and a gate electrode disposed over the gate dielectric, wherein the trench operates to prevent breakdown of the gate dielectric, or the FET may be a Junction FET. The FET may be designed to operate at radio frequencies or under heavy-ion bombardment. The semiconductor substrate and the semiconductor layer may comprise a wide band-gap semiconductor such as silicon carbide.

Abstract: A transient noise reduction filter comprises a cable including one or more twisted pairs of conductors and one or more common mode chokes (CMCs). The one or more CMCs a formed from respective pluralities of turns of the cable.

Abstract: A control signal may be produced in response to an assertion of a switch signal by asserting the control signal, waiting an adaptive delay after the assertion of the switch signal, de-asserting the control signal in response to the expiration of the adaptive delay, and re-asserting the control signal in response to a current generated according to the control signal becoming zero. The adaptive delay may be adjusted according to a voltage generated using the current. A circuit may include an XOR gate producing the control signal from a switch signal and an output of a Set-Reset Flip-Flop (SRFF), a zero-detect circuit that resets the SRFF when a current generated using the control circuit becomes zero, and a delay circuit to set the SRFF an adaptive delay after assertion of the switch signal and to adjust the adaptive delay according to a voltage generated by the current.