Abstract: A stable high resistant transparent coating is formed by choosing an undoped wide band gap semiconducting oxide, and by forming a film from elements constituting the undoped oxide and from a dopant which is chosen so as to form a doped wide band gap semiconducting oxide, the doped oxide having an electrical resistance greater than the undoped oxide, the electrical resistance of the doped oxide being such that it equals an optimum value when the coating composition is inherently stable.
Abstract: An optical data storage coating includes a cermet structure, the cermet including metal particles disposed in a dielectric matrix, both the metal particles and dielectric matrix being formed of stable, high melting point materials preferably depositable on a substrate by sputtering.