Abstract: A full-color silicon-based organic light-emitting diode (OLED) display device includes a base plate, a metal anode, an organic functional layer, a metal cathode, a thin film encapsulation (TFE) layer, and a color filter layer that are sequentially stacked from bottom to top. The metal anode includes a first indium tin oxide (ITO) anode layer and a second ITO anode layer each of which has a different thickness. The color filter layer includes a red (R) filter and a blue (B) filter, which are coated on a light-emitting region, which corresponds to the first ITO anode layer, of the TFE layer. The present disclosure overcomes the problem that the top-emission white OLED (WOLED) with a single optical thickness in the prior art is prone to color shift because the R, green (G), and B lights correspond to optical microcavities with different thicknesses.

Abstract: A full-color silicon-based organic light-emitting diode structure includes a metal anode layer, an organic functional layer, a metal cathode layer, an encapsulation layer, and a color filter layer. The organic functional layer includes a light-emitting layer configured to emit white light. The light-emitting layer includes a red light-emitting unit, a blue light-emitting unit, a green light-emitting unit, and a light-emitting common transport layer. The red light-emitting unit and the blue light-emitting unit are vapor-deposited on the same fine metal mask, and other structural film layers are vapor-deposited on a common metal mask. The present disclosure overcomes problems that red, green, and blue spectra cannot appear at the same time due to different lengths of red, green, and blue resonant cavities, the color gamut of the product is low due to large intensity differences, and the product life is affected due to large light loss caused by the color filter.