Abstract: A chemical mechanical polishing slurry, including silicon dioxide particles, a nitrogen-containing heterocyclic compound having one or more carboxy group(s), and an ethoxylated butoxylated alky alcohol, and use of the chemical mechanical polishing slurry in the polishing silicon oxide, polysilicon, and silicon nitride. Polishing rate for silicon nitride using the polishing slurry is much higher than that for silicon oxide and polysilicon. The polishing slurry can be applied to chemical mechanical polishing in which silicon oxide/polysilicon is used as the stop layer, and can be used to control the amount of oxide and polysilicon removed from the substrate surface during polishing.

Abstract: The present invention discloses a chemical mechanical polishing slurry, and the chemical mechanical polishing slurry comprises silica abrasive particles and accelerating agents, wherein the accelerating agents are selected from pyridine compound, piperidine compound, pyrrolidine compound or pyrrole compound and their derivatives, which have one or more carboxyl groups, and pyrimidine compound and its derivatives, which have one or more amino groups. The chemical mechanical polishing slurry can simultaneously increase the removal rate of both silicon nitride and polysilicon.

Abstract: The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.

Abstract: A composition for removing a photoresist layer and a method for using it are disclosed. The composition comprises a chemical portion which includes water and chemical constituents dissolving or softening the photoresist layer and a mechanical portion which is abrasive particles. Using the composition and the method according to the present invention can decrease the conventional two steps of removing a photoresist layer process to one step, thereby simplifying the procedure, shortening the removing time and reducing the cost. The chemical constituents in the composition according to the present invention are of low toxicity and flammability and the amount used is small, which makes it more friendly with the environment and decreases the expense of disposing the waste.

Abstract: The present invention discloses a polishing slurry, wherein said polishing slurry comprises a carrier and functionalized alumina grains. The polishing slurry, which comprises functionalized alumina grains having desirable dispersibility, has desirable stability and is able to lower the defect rate of the substrate surface, improve the surface quality, decrease the total metal loss and enlarge the variation range of the technical parameters.

Abstract: This invention disclosed a chemical mechanical polishing slurry, which includes at least one abrasive particle, an oxidant and a carrier. The oxidant is combined with a big metallorganic compound; and the applications and corresponding handling method are also disclosed. This invention slurry can realize high removal rate, no corrosion, low defectivity and high plan.

Abstract: The present invention discloses a polishing slurry, wherein said polishing slurry comprises a carrier and functionalized alumina grains. The polishing slurry, which comprises functionalized alumina grains having desirable dispersibility, has desirable stability and is able to lower the defect rate of the substrate surface, improve the surface quality, decrease the total metal loss and enlarge the variation range of the technical parameters.

Abstract: A new composition for removing a photoresist layer and a method for using the same are disclosed. The composition comprises a polar solvent and an oxidant. The composition according to the present invention comprises chemical substances with less toxicity and flammability at lower contents, which makes it more friendly to environment and decreases the expense for disposing the chemical waste. The method for using the composition shortens the time for cleaning and removes the residue more completely, thereby enhancing the electrical conductivity.