Patents Assigned to ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
  • Chemical-mechanical polishing solution having high silicon nitride selectivity
    Patent number: 11111413
    Abstract: A chemical-mechanical polishing slurry having high Silicon Nitride removal rate selectivity includes abrasive particles and a compound containing one or more carboxyl groups. The polishing slurry has high SiN removal rate, low TEOS removal rate, and high removal rate selectivity of SiN to TEOS. The polishing slurry can significantly reduce the defects on Oxide surface which has an excellent market application prospect.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: September 7, 2021
    Assignee: ANJI MICROELECTRONICS TECHNOLOGY (SHANGHAI) CO., LTD.
    Inventors: Wenting Zhou, Jianfen Jing