Patents Assigned to Anteos, Inc.
  • Patent number: 8093139
    Abstract: The present invention describes a method of fabrication of nanocomposite semiconductor materials comprising aligned arrays of metal or semiconductor nanowires incorporated into semiconductor material for application in various electronic, optoelectronic, photonic and plasmonic devices employing self-assembling of the nanowires under light illumination from charged interstitial defect atoms, which are either inherently present in the semiconductor material or artificially introduced in the matrix semiconductor material.
    Type: Grant
    Filed: December 11, 2008
    Date of Patent: January 10, 2012
    Assignees: Anteos, Inc., Altair Center, LLC
    Inventor: Sergei Krivoshlykov