Abstract: A solid-state thermal battery system is disclosed herein. The system includes a stationary thermal storage medium that can be charged by adding heat to the thermal storage medium. Actuated heat engines can be utilized to discharge the solid-state thermal battery, converting the heat stored in the thermal storage medium into electricity. The heat engines are actuated in a manner that reduces thermal gradients in the thermal storage medium to increase the efficiency of the system. In one embodiment, the thermal storage medium is contained in a main chamber of an insulated container. The heat engines are stored, when idle, in an ancillary chamber adjacent to the main chamber and moved into the main chamber by an actuation system to begin discharging the solid-state thermal battery. The heat engines follow a path during discharge to dynamically move between regions of the thermal storage medium to reduce thermal gradients induced therein.

Abstract: The present invention is directed to a system for generating thermal energy from different energy sources, having a combustion-powered thermal energy source, an electric-powered thermal energy source, a steam distribution system, and a controller. The combustion-powered thermal energy source and the electric-powered each having a plurality of sensors. The controller is configured to actuate either or both of the energy sources based at least in part on information received from one or more of the plurality of sensors.

Abstract: The technology relates to producing an optoelectronic device. A method for forming an optoelectronic device on a substrate may include growing an epitaxial structure on the substrate, wherein the substrate comprises a semiconductor material having a lattice constant between 5.7 and 6.0 Angstroms, and wherein the epitaxial structure includes an epitaxial device layer, then depositing a metal layer on the epitaxial structure, and selectively removing the epitaxial layer, thereby separating the optoelectronic device from the substrate. An optoelectronic device may include an optoelectronic device structure including an epitaxial device layer having a lattice constant between 5.7 and 6.0 Angstroms, a metal layer deposited onto a surface of the optoelectronic device structure, and a carrier structure, wherein the optoelectronic device comprises a thin film, single crystal device.

Abstract: A thermal storage solution system is disclosed herein. The system includes an insulated container having a thermal storage medium, a heating element configured to heat the thermal storage medium, a heat receiving unit (e.g., thermophotovoltaic (TPV) heat engine, heat transfer fluid, an industrial process component) configured to convert heat into electric energy, and a mechanism configured to control a view factor between the thermal storage medium and the heat engine. In another embodiment, the system includes multiple thermal storage media as unit cells in a single enclosure or container with insulation between adjacent unit cells.