Patents Assigned to AP Memory Corp, USA
  • Method of manufacture and/or operation of ferroelectric memory array
    Patent number: 10885980
    Abstract: In one embodiment, a device is described for using ferroelectric material in a memory cell. In another embodiment, a method of operating a ferroelectric memory cell is described. Other embodiments are likewise described.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: January 5, 2021
    Assignee: AP Memory Corp., USA
    Inventor: Wenliang Chen
  • Ferroelectric memory device
    Patent number: 10622070
    Abstract: In one embodiment, a device is described for using ferroelectric material in a memory cell without a selector device. In another embodiment, a method of operating a ferroelectric memory cell without a selector device is described. Other embodiments are likewise described.
    Type: Grant
    Filed: September 26, 2018
    Date of Patent: April 14, 2020
    Assignee: AP Memory Corp, USA
    Inventor: Wenliang Chen
  • Ferroelectric memory device
    Patent number: 10109350
    Abstract: In one embodiment, a device is described for using ferroelectric material in a memory cell. In another embodiment, a method of operating a ferroelectric memory cell is described. Other embodiments are likewise described.
    Type: Grant
    Filed: July 29, 2016
    Date of Patent: October 23, 2018
    Assignee: AP Memory Corp., USA
    Inventor: Wenliang Chen
  • Memory cell
    Patent number: 8890227
    Abstract: Implementations disclosed herein may relate to a memory cell, such as a DRAM memory cell, for example.
    Type: Grant
    Filed: April 26, 2013
    Date of Patent: November 18, 2014
    Assignee: AP Memory Corp, USA
    Inventors: Wenliang Chen, Lin Ma