Abstract: The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.

Abstract: The present invention relates to chemical vapor deposition apparatus. In the chemical vapor deposition apparatus, an RF power source connection portionconnected to an external RF power source is installed on an upper side of a chamber; an RF electrode plate is installed within the chamber to be spaced with a predetermined gap from an inner upper surface of the chamber and to be spaced with a predetermined gap from a showerhead disposed below the RF electrode plate; plasma is generated in a first buffer portion, which is defined by a gap between the RF electrode plate and an upper surface of the showerhead, by means of the electric power applied from the external RF power source to the RF electrode plate; the showerhead is divided into two sections in a vertical direction and a second buffer portion is defined by a space between the two sections; reactant gases are supplied to the first buffer portion in which the plasma is generated; and source gases are supplied to the second buffer portion.

Abstract: There is disclosed a showerhead apparatus for radical-assisted deposition including a showerhead of a two-stair structure separated by a given distance, which has a first buffer for uniformly distributing a raw material gas and a second buffer for uniformly distributing a plasma gas, wherein a plasma is generated within the showerheads and the raw material gas sprayed into the plasma is constantly maintained, thus forming a uniform thin film on a wafer or a substrate.

Abstract: There is disclosed a showerhead apparatus for radical-assisted deposition including a showerhead of a two-stair structure separated by a given distance, which has a first buffer for uniformly distributing a raw material gas and a second buffer for uniformly distributing a plasma gas, wherein a plasma is generated within the showerheads and the raw material gas sprayed into the plasma is constantly maintained, thus forming a uniform thin film on a wafer or a substrate.

Abstract: A sintered metal mould formed by plastically forming a material consisting of a metal powder or ceramic powder being mixed with a binder consisting of agar powder, and sintering the material.

Abstract: In the exhaust fluid path, there are provided a porous pipe that is in communication with a muffling chamber via a plurality of small through-holes formed across a wall thickness of the pipe, and an inner pipe of a given length is inserted in the porous pipe with a gap formed between the outer surface of the inner pipe and the inner surface of the porous pipe. The gap is narrowed or closed in its outlet portion and thus the exhaust sound waves flowing through the gap are compressed so that interference and scattering into the muffling chamber of the exhaust sound waves via the small through-holes are promoted, thereby enhancing muffling performance. A plurality of small through-holes may also be formed in the inner pipe. A relatively large opening may be formed in part of the porous pipe to open into the muffling chamber, or a relatively large space may be formed which divides the porous pipe into two pipe elements and opens into the muffling chamber.