Abstract: Systems, methods and media for current monitoring are provided herein. An exemplary method may include: receiving a temperature of a power MOSFET, the temperature being sensed by a temperature sensor; determining a resistance of the power MOSFET using the received temperature; receiving a voltage across the power MOSFET, the voltage being measured by a differential amplifier; calculating a current provided to an electrical load by the power MOSFET using the determined resistance of the power MOSFET and the received voltage; comparing the calculated current to a predetermined threshold; and switching the power MOSFET to an off state in response to the calculated current exceeding the predetermined threshold.

Abstract: A method and system provide dynamic communities of interest on an end user workstation utilizing commercial off the shelf products, with central management and the ability for a users to log on only once (also known as “single sign on” or “SSO”). The software images that make up the virtual machine can be patched and updated with other required changes from a central storage area where the image can be administratively updated just once. A digital signature can be applied to the software images to ensure authenticity and integrity, along with determining whether a software image is up to date.

Abstract: In general, in one aspect, the invention features a method that includes forming layer of a mask material on a surface of a first layer, patterning the layer of the mask material to obtain a mask feature, the mask feature having a surface comprising a depression, inducing mass transport of the mask material of the mask feature to obtain a modified mask feature, and transferring a profile of the modified mask feature into the first layer to form a first structure. In general, in another aspect, the invention features a method that includes forming layer of a mask material on a surface of a first layer, patterning the layer of the mask material to obtain a mask feature, inducing mass transport of the mask material of the mask feature to obtain a modified mask feature, and transferring a profile of the modified mask feature into the first layer to form a first structure.