Abstract: Methods may be performed to limit footing, pitch walking, and other alignment issues. The methods may include forming a treatment gas plasma within a processing region of a semiconductor processing chamber. The methods may further include directing effluents of the treatment gas plasma towards a semiconductor substrate within the processing region of the semiconductor processing chamber, and anisotropically modifying a surface of a first material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may also include passivating a surface of a second material on the semiconductor substrate with the effluents of the treatment gas plasma. The methods may further include forming a remote fluorine-containing plasma to produce fluorine-containing plasma effluents, and flowing the fluorine-containing plasma effluents to the processing region of the semiconductor processing chamber.
Type:
Grant
Filed:
April 10, 2018
Date of Patent:
November 26, 2019
Assignee:
Appled Materials, Inc.
Inventors:
Mandar B. Pandit, Mang-Mang Ling, Tom Choi, Nitin K. Ingle
Abstract: Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
Type:
Grant
Filed:
October 24, 2013
Date of Patent:
January 5, 2016
Assignee:
Appled Materials, Inc.
Inventors:
Xinyu Fu, Srinivas Gandikota, Avgerinos V. Gelatos, Atif Noori, Mei Chang, David Thompson, Steve G. Ghanayem