Patents Assigned to AppliCote Associates, LLC
  • Thermal doping of materials
    Patent number: 9620667
    Abstract: A method is disclosed for doping a semiconductor material comprising the steps of providing a semiconductor material having a first and a second surface. A dopant precursor is applied on the first surface of the semiconductor material. A thermal energy beam is directed onto the second surface of the semiconductor material to pass through the semiconductor material and impinge upon the dopant precursor to dope the semiconductor material thereby.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: April 11, 2017
    Assignee: AppliCote Associates LLC
    Inventors: Nathaniel R Quick, Michael C Murray
  • Ultra-high pressure doping of materials
    Patent number: 9601641
    Abstract: A method and apparatus is disclosed for doping a semiconductor substrate with a dopant concentration greater than 1020 atoms per cubic centimeter. The method is suitable for producing an improved doped wide bandgap wafer for power electronic devices, photo conductive semiconductor switch, or a semiconductor catalyst.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: March 21, 2017
    Assignee: AppliCote Associates, LLC
    Inventors: Nathaniel R Quick, Michael C Murray