Abstract: A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.
Type:
Grant
Filed:
September 25, 2013
Date of Patent:
June 16, 2015
Assignees:
UT-Battelle, LLC, APPLICOTE, LLC
Inventors:
Nathaniel R Quick, Pooran C Joshi, Chad Edward Duty, Gerald Earle Jellison, Jr., Joseph Attilio Angelini