Abstract: The present invention relates to a device for testing an optoelectronic module, comprising a first source for generating an electromagnetic beam or particle beam, a second source for illuminating the optoelectronic module; and a detector. In addition, a method for testing an optoelectronic module is provided comprising illuminating the optoelectronic module, directing an electromagnetic beam or particle beam and detecting defects in the optoelectronic module. The illumination additional to the electromagnetic beam or particle beam makes defects visible which otherwise would not be detected.
Type:
Grant
Filed:
April 4, 2007
Date of Patent:
July 17, 2012
Assignee:
APPLIED MATERIALS GmbH
Inventors:
Bernhard Gunter Mueller, Ralf Schmid, Matthias Brunner
Abstract: The invention relates to a method of calibration of the beam position of a corpuscular beam. A calibration body with structures is used, wherein the structures have a structure period PS in the plain section and within each structure there is a position L intended for the measurement. For the calibration, at least one detection signal each at structures in the plain section of the calibration body is generated, wherein the corpuscular beam is deflected with deflectors on beam target positions L1 with the beam target period P1, which is larger than half of the structure period PS, whereby a basic calibration is used for the control of the deflectors, and wherein the beam target deflections deviate either in the beam target period P1 from the structure period PS and/or in the beam target position L1 from the position L.
Type:
Grant
Filed:
January 5, 2006
Date of Patent:
August 30, 2011
Assignee:
Applied Materials GmbH
Inventors:
Matthias Brunner, Ralf Schmid, Bernhard Mueller, Axel Wenzel
Abstract: The invention relates to a method of calibration of the beam position of a corpuscular beam. A calibration body with structures is used, wherein the structures have a structure period Ps in the plain section and within each structure there is a position L intended for the measurement. For the calibration, at least one detection signal each at structures in the plain section of the calibration body is generated, wherein the corpuscular beam is deflected with deflectors on beam target positions L1 with the beam target period P1, which is larger than half of the structure period Ps, whereby a basic calibration is used for the control of the deflectors, and wherein the beam target deflections intentionally deviate either in the beam target period P1 from the structure period Ps and/or in the beam target position L1 from the position L.
Type:
Application
Filed:
January 5, 2006
Publication date:
July 29, 2010
Applicant:
APPLIED MATERIALS GMBH
Inventors:
Matthias Brunner, Ralf Schmid, Bernhard Mueller, Axel Wenzel
Abstract: The present invention relates to a device for testing an optoelectronic module, comprising a first source for generating an electromagnetic beam or particle beam, a second source for illuminating the optoelectronic module; and a detector. In addition, a method for testing an optoelectronic module is provided comprising illuminating the optoelectronic module, directing an electromagnetic beam or particle beam and detecting defects in the optoelectronic module. The illumination additional to the electromagnetic beam or particle beam makes defects visible which otherwise would not be detected.
Type:
Application
Filed:
April 4, 2007
Publication date:
July 16, 2009
Applicant:
APPLIED MATERIALS GMBH
Inventors:
Bernhard Gunter Mueller, Ralf Schmid, Matthias Brunner
Abstract: The invention relates to methods for positioning of a substrate 140 and contacting of the test object 301 for testing with a test apparatus with an optical axis and corresponding devices. Thereby, the substrate is put on the holder 130. The substrate is positioned relative to the optical axis. A contact unit 150 is also positioned relative to the optical axis, whereby the contact unit is positioned independent of the positioning activity of the substrate. Thereby, a flexible contacting of test objects on the substrate can be realized.
Abstract: A method for etching phase shift layers of half-tone phase masks includes etching a phase shift layer by using a plasma which is obtained from CH3F and O2. A high cathode power is used for the etching. The method has a very high selectivity between the substrate and the phase shift layer, so that half-tone phase masks with a high imaging quality can be produced.