Abstract: The implementations described herein generally relate to a sensing device for use in the semiconducting industry, which sense process parameters to control semiconductor processes. More specifically, the implementations relate to packaging for a surface acoustic wave (SAW) based devices or wireless or RF-responsive sensors for use in the harsh processing environments of a semiconductor processing chamber such that the neither the sensor and its components nor the chamber components interfere with or contaminate one another. The sensor packaging may include various packaging layers with or without protective coatings and a waveguide. The packaging may have a thickness chosen such that the thickness is less than the electromagnetic wavelength of a SAW sensor radio wave. The sensing devices may be disposed in cavities of the chamber, the processing volume, on chamber components, and/or on the substrate.

Abstract: In-situ low pressure chamber cleans and gas nozzle apparatus for plasma processing systems employing in-situ deposited chamber coatings. Certain chamber clean embodiments for conductor etch applications include an NF3-based plasma clean performed at pressures below 30 mT to remove in-situ deposited SiOx coatings from interior surfaces of a gas nozzle hole. Embodiments include a gas nozzle with bottom holes dimensioned sufficiently small to reduce or prevent the in-situ deposited chamber coatings from building up a SiOx deposits on interior surfaces of a nozzle hole.

Abstract: Embodiments include processing equipment. A processing system having an optical temperature measurement subsystem is described. In an example, the optical temperature measurement subsystem includes a light source to direct an excitation light into a process chamber, and a photosensitive array to detect a response light received from the process chamber. The detected light can be monitored to determine a temperature of a substrate mounted within the process chamber. Other embodiments are also described and claimed.

Abstract: Electroplating processing systems according to the present technology may include a recirculating tank containing a first volume of processing fluid. The recirculating tank may be fluidly coupled with a delivery pump. The systems may include a vessel configured to receive the processing fluid from the pump. The vessel may include an inner chamber and an outer chamber, and the inner chamber may be sized to hold a second volume of processing fluid less than the first volume of processing fluid. A liquid level sensor may be associated with the vessel to provide a liquid level indication in the outer chamber. The systems may include a return line coupled with an outlet of the vessel and coupled with an inlet of the recirculating tank. The systems may also include a return pump fluidly coupled with the return line. The return pump may be electrically coupled with the liquid level sensor.

Abstract: Metal coordination complexes comprising a metal atom coordinated to at least one diazabutadiene ligand having a structure represented by: where each R is independently a C1-C13 alkyl or aryl group and each R? is independently H, C1-C10 alkyl or aryl group are described. Processing methods using the metal coordination complexes are also described.

Abstract: Methods for depositing metal oxide layers on metal surfaces are described. The methods include exposing a substrate to separate doses of a metal precursor, which does not contain metal-oxygen bonds, and a modified alcohol with an electron withdrawing group positioned relative to a beta carbon so as to increase the acidity of a beta hydrogen attached to the beta carbon. These methods do not oxidize the underlying metal layer and are able to be performed at lower temperatures than processes performed with water or without modified alcohols.

Abstract: Apparatus and methods for spatial atomic layer deposition including at least one first exhaust system and at least one second exhaust system. Each exhaust system including a throttle valve and a pressure gauge to control the pressure in the processing region associated with the individual exhaust system.

Abstract: Optical grating components and methods of forming are provided. In some embodiments, a method includes providing a substrate, and etching a plurality of trenches into the substrate to form an optical grating. The optical grating may include a plurality of angled trenches, wherein a depth of a first trench of the plurality of trenches varies between at least one of the following: a first lengthwise end of the first trench and a second lengthwise end of the first trench, and between a first side of the first trench and a second side of the first trench.

Abstract: Disclosed are methods of forming a semiconductor device, such as a finFET device. One non-limiting method may include providing a semiconductor device including a substrate and a plurality of fins extending from the substrate, and forming a source trench isolation (STI) material over the semiconductor device. The method may further include recessing the STI material to reveal an upper portion of the plurality of fins, implanting the semiconductor device, and forming a capping layer over the plurality of fins and the STI material. The method may further include removing a first fin section of the plurality of fins and a first portion of the capping layer, wherein a second fin section of the plurality of fins remains following removal of the first fin section.

Abstract: Disclosed are methods of forming a semiconductor device, such as a finFET device. One non-limiting method may include providing a semiconductor device including a substrate and a plurality of fins extending from the substrate, and forming a source trench isolation (STI) material over the semiconductor device. The method may further include performing a fin cut by removing a first fin section of the plurality of fins and a first portion of the STI material, and forming a second STI material over a second fin section of the plurality of fins, wherein the second fin section is left remaining following removal of the first fin section. The method may further include recessing the STI material and the second STI material, forming a spin-on-carbon (SOC) layer over the semiconductor device, and implanting the STI material and the second STI material through the SOC layer.

Abstract: Provided herein are systems and methods for spatially resolved optical metrology of an ion beam. In some embodiments, a system includes a chamber containing a plasma/ion source operable to deliver an ion beam to a wafer, and an optical collection module operable with the chamber, wherein the optical collection module includes an optical device for measuring a light signal from a volume of the ion beam. The system may further include a detection module operable with the optical collection module, the detection module comprising a detector for receiving the measured light signal and outputting an electric signal corresponding to the measured light signal, thus corresponding to the property of the sampled plasma volume.

Abstract: A vacuum processing system for a flexible substrate is provided. The processing system includes a first chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a second chamber adapted for housing one of a supply roll for providing the flexible substrate and a take-up roll for storing the flexible substrate; a maintenance zone between the first chamber and the second chamber; and a first process chamber for depositing material on the flexible substrate, wherein the second chamber is provided between the maintenance zone and the first process chamber. The maintenance zone allows for maintenance access to at least one of the first chamber and the second chamber.

Abstract: Methods for depositing a low resistivity nickel silicide layer used in forming an interconnect and electronic devices formed using the methods are described herein. In one embodiment, a method for depositing a layer includes positioning a substrate on a substrate support in a processing chamber, the processing chamber having a nickel target and a silicon target disposed therein, the substrate facing portions of the nickel target and the silicon target each having an angle of between about 10 degrees and about 50 degrees from the target facing surface of the substrate, flowing a gas into the processing chamber, applying an RF power to the nickel target and concurrently applying a DC power to the silicon target, concurrently sputtering silicon and nickel from the silicon and nickel targets, respectively, and depositing a NixSi1-x layer on the substrate, where x is between about 0.01 and about 0.99.

Abstract: In a plasma enhanced physical vapor deposition of a material onto workpiece, a metal target faces the workpiece across a target-to-workpiece gap less than a diameter of the workpiece. A carrier gas is introduced into the chamber and gas pressure in the chamber is maintained above a threshold pressure at which mean free path is less than 5% of the gap. RF plasma source power from a VHF generator is applied to the target to generate a capacitively coupled plasma at the target, the VHF generator having a frequency exceeding 30 MHz. The plasma is extended across the gap to the workpiece by providing through the workpiece a first VHF ground return path at the frequency of the VHF generator.

Abstract: A wafer-level bridge die is affixed with an adhesive layer to a redistribution layer (RDL) that has been temporarily bonded to a carrier. Electrical interconnects are formed on the RDL and on the bridge die and encapsulated in a first mold layer. A plurality of dies are coupled to the RDL and the bridge die such that a die is electrically connected to at least one electrical interconnect of the RDL and to at least one electrical interconnect of the bridge die. A second mold layer is formed on the first mold layer to encapsulate the plurality of dies. The temporary bond is then broken and the carrier is removed, exposing the RDL connections.

Abstract: Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes an adapter having an adapter body and a shield portion radially inward of the adapter body; a heat transfer channel formed in the adapter body; a shadow ring coupled to the adapter such that the shield portion of the adapter extends over a portion of the shadow ring; and a ceramic insulator disposed between the shadow ring and the adapter to electrically isolate the shadow ring from the adapter.

Abstract: Embodiments described herein generally relate to a temperature control system in a substrate support assembly. In one embodiment, a substrate support assembly is disclosed. The substrate support assembly includes a support plate assembly The support plate assembly includes a first fluid supply manifold, a second fluid supply manifold, a first fluid return manifold, a second fluid return manifold, a plurality of first fluid passages, a plurality of second fluid passages, and a fluid supply conduit. The plurality of first fluid passages extend from the first fluid supply manifold to the first fluid return manifold. The plurality of second fluid passages extend from the second fluid supply manifold to the second fluid return manifold. The plurality of fluid passages extend across an upper surface of the support plate assembly in an alternating manner. The fluid supply conduit is configured to supply a fluid to the fluid supply manifolds.

Abstract: Thermal monitors comprising a substrate with at least one camera position on a bottom surface thereof, a wireless communication controller and a battery. The camera has a field of view sufficient to produce an image of at least a portion of a wafer support, the image representative of the temperature within the field of view. Methods of using the thermal monitors are also described.

Abstract: Embodiments disclosed herein include a faceplate having a sensor assembly, a processing chamber having the same, and a method for monitoring a substrate in a processing chamber. In one embodiment, a faceplate is configured to introduce processing gases into a plasma processing chamber. The faceplate has one or more holes. A sensor assembly is disposed in the one or more holes. The sensor assembly has a sensor and a controller.

Abstract: A method of controlling polishing includes storing a base measurement, the base measurement being a measurement of a substrate after deposition of at least one layer overlying a semiconductor wafer and before deposition of an outer layer over the at least one layer, after deposition of the outer layer over the at least one layer and during polishing of the outer layer on substrate, receiving a sequence of raw measurements of the substrate from an in-situ monitoring system, normalizing each raw measurement in the sequence of raw measurement to generate a sequence of normalized measurements using the raw measurement and the base measurement, and determining at least one of a polishing endpoint or an adjustment for a polishing rate based on at least the sequence of normalized measurements.