Abstract: An independent dual-blade robot assembly is provided for use in semiconductor wafer processing. The robot assembly includes a rotatable stage located within a chamber, a linear track mounted on an upper surface of the rotatable stage, and article first and second motorized platens slidably mounted on the linear track and configured for movement along a longitudinal axis of the linear track. Each motorized platen is magnetically driven and carries an end effector which extends from a leading edge. The end effectors of the first and second motorized platens are preferably horizontally co-planar. The linear track may be a single track carrying both motorized platens, or two linear track sections may be provided where each carries a single motorized platen. The two track sections may be pivotally or rotatably connected to the rotatable stage.

Abstract: An improved sandwich layer of silicon dioxide layers for gap filling between metal lines. This is accomplished using a first layer formed in a PECVD process using TEOS and a fluorine-containing compound to give a barrier layer with a dielectric constant of less than 4.0, preferably approximately 3.5. Subsequently, an SACVD process is used with TEOS to form a gap filling layer. By appropriately choosing the thickness of the respective layers, one can adjust the dielectric to a value which is a combination of the dielectric constants of the two different layers, preferably giving a dielectric constant of approximately 3.6-3.7.

Abstract: A method and apparatus for uniformly ramping the temperatures of a wafer and a susceptor using a first heat source primarily directed at the wafer and a second heat source primarily directed at the susceptor while keeping the wafer at approximately the same temperature as the susceptor but measuring only the temperature of the susceptor. The method comprises the steps of: determining and storing a plurality of steady-state temperatures of the susceptor as a function of the total power provided to the first heat source and the second heat source; ramping the susceptor from an initial temperature to a final temperature; and heating the wafer from the initial temperature to the final temperature, wherein the power to the first heat source is determined from the susceptor's temperature and the plurality of steady-state temperatures of the wafer and susceptor as a function of total power.

Abstract: A method and apparatus for forming a multilayer insulating film on a substrate involves forming a number of carbon-based layers on the substrate, each interlaid with layers of organic material, such as parylene. Preferably, the carbon-based layers are formed using a high-density plasma chemical vapor deposition system, although other CVD systems may also be used. The result is a multilayer insulating film having a low overall dielectric constant, excellent gap-fill characteristics, and desirable thermal properties.

Abstract: An apparatus for polishing semiconductor wafers and other workpieces that includes a polishing pads mounted on respective platens at multiple polishing stations. Multiple wafer heads, at least one greater in number than the number of polishing stations, can be loaded with individual wafers. The wafer heads are suspended from a carousel, which provides circumferential positioning of the heads relative to the polishing pads, and the wafer heads oscillate radially as supported by the carousel to sweep linearly across the respective pads in radial directions with respect to the rotatable carousel. Each polishing station includes a pad conditioner to recondition the polishing pad so that it retains a high polishing rate. Washing stations may be disposed between polishing stations and between the polishing stations and a transfer and washing station to wash the wafer as the carousel moves. A transfer and washing station is disposed similarly to the polishing pads.

Abstract: A readily removable deposition shield assembly for processing chambers such as chemical vapor deposition (CVD), ion implantation, or physical vapor deposition (PVD) or sputtering chambers, is disclosed. The shield assembly includes a shield member which is mounted to the chamber for easy removal, such as by screws, and defines a space along the periphery of the substrate support. A shield ring is inserted into the peripheral space and is thus mounted in removable fashion and is automatically centered about the substrate. The shield ring overlaps the cylindrical shield and a deposition ring. The deposition ring removably rests upon a flange extending from the outer periphery of a substrate support pedestal. Collectively, these components prevent deposition on the chamber and hardware outside the processing region.

Abstract: A sputtering target assembly is fabricated by diffusion bonding a target material plate to a backing plate. The plates are cleaned in a vacuum environment, and an interlayer is formed on one or more of the plates. The plates are then joined under heat and pressure, before an oxide layer can form on the joining surfaces of the plates. The plates may be sequentially processed through cleaning, interlayer deposition, and bonding chambers, all with vacuum environments, to form the finished part, or, a single chamber may be used to provide the cleaning, interlayer deposition and bonding functions.

Abstract: An electrostatic chuck (20) for holding a substrate (45) in a process chamber (80) having a voltage supply terminal (65) for charging the chuck (20). The chuck includes an electrostatic member (25) comprising at least one electrode (30), an electrically insulated holding surface (40) for holding a substrate (45) thereon, and an electrical contact surface (48) for providing charge to the electrode. A unidirectionally conducting coupler layer (70) electrically couples the contact surface (48) of the electrostatic member to the voltage supply terminal to conduct charge substantially only in a single direction from the terminal to the contact surface. Preferably, an electrical connector (50) having a junction surface (55) bonded to the contact surface (55) of the electrode, and a terminal surface (60) for electrically contacting the voltage supply terminal (65), is used to electrically couple the unidirectionally conducting coupler layer (70) to the voltage supply terminal (65).

Abstract: The present invention provides a plasma enhanced chemical vapor deposition method and apparatus for reducing the hydrogen concentration in amorphous silicon carbide films deposited on a substrate. The process combines a noble gas such as helium with a silicon source such as silane and a carbon source such as methane in the reaction zone of a CVD chamber. The resulting silicon carbide films have a low concentration of hydrogen and high compressive stress. The films are preferably produced with a plasma generated by a mixture of high and low radio frequency.

Abstract: An improved deposition chamber deposits useful layers on substrates. The improved chamber includes a substrate edge protection system which, in combination with a purge gas, protects selected portions of the edge and underside of the substrate from the deposition gas while preventing the creation of a masked area on the substrate edge. The substrate edge protection system includes a ring, which is received over a substrate received on the substrate support member and which is alignable with the substrate to provide a minimum gap between the edge of the substrate and the ring.

Abstract: Apparatus for measuring plasma characteristics within a semiconductor wafer processing system and a method of fabricating and using the apparatus. The apparatus contains a first insulator layer upon which one or more conductive collector pads are formed by patterning and etching a copper laminate. Each collector pad is connected to a conductive lead (e.g., a printed circuit trace) that extends from each collector pad to the edge of the first insulator layer. A second insulator layer is positioned above the first insulator layer such that the collector pad(s) and their respective lead(s) are sandwiched between the two insulator layers. An adhesive is used to affix the second insulator to the first insulator and the collector pads. The collector pads are exposed to the plasma through apertures defined by the second insulator layer.

Abstract: A plasma system is disclosed for processing a substrate and includes a chamber body defining a plasma cavity therein and having a centrally located gas inlet, and a top antenna configured in position relative to the plasma cavity to produce a center-peaked plasma density profile above the substrate during operation. The top antenna has a central passage which surrounds the centrally located gas inlet. A side antenna is preferably configured and positioned relative to the plasma chamber to produce a hollow-center plasma density profile above the substrate during operation. Together, the top and side antennas and the centrally located gas inlet provide a uniform plasma directly over the surface of the substrate to be processed.

Abstract: An electrostatic chuck includes a pedestal having a metallic upper surface, and a layer of a porous dielectric material formed on said upper surface of the pedestal. The dielectric layer is impregnated with a plasma-resistant sealant.

Abstract: In sputtering equipment, a pair of targets are positioned in spaced apart relation defining a space therebetween. Each of the targets forms an electrode that is connected to a voltage supply unit. The voltage generates an electric field between the target pair. Furthermore, a process gas is supplied to the space between the targets. As the gas flows through this space, the electric field excites the gas into a plasma state. The plasma, being proximate the targets, causes the material comprising the targets to be sputtered. Additionally, to increase the plasma density in the space between the targets, a magnetic field is applied orthogonally to the electric field. A substrate, upon which the target material is sputtered, is positioned within the sputtering equipment opposite the targets. Further, because the target surfaces from which the material is sputtered are not parallel to the substrate, sputtered particles strike the substrate from an oblique angle.

Abstract: A wafer heater assembly (8) for a deposition/etch chamber (2) includes a base (32) and a wafer support or chuck (36), having a wafer-chucking surface (76), spaced apart from the base by a circumferential barrier support (38). A heater sub-assembly (54) is mounted to the wafer support. Bolts (48) are used to secure the wafer support to the base with the barrier support therebetween to press the barrier support against an elastomeric O-ring, a metal V-seal or other fluid seal (46) positioned between the base and base end (42) of the barrier support. This eliminates the need to discard the entire heater assembly if the dielectric wafer-chucking surface becomes damaged. The temperature of the fluid seal is about 50.degree.-70.degree. C. lower than the temperature of the wafer-chucking surface when the wafer-chucking surface is about 200.degree.-300.degree. C.

Abstract: A process using a retaining ring assembly of a carrier head to precompress a polishing pad to reduce or minimize the edge effect in a chemical mechanical polishing process.

Abstract: An integrated wafer loader is provided for use with a vacuum process chamber. At least one semipermeable membrane provided in the separator between upper and lower chambers of a load lock permits air flow while preventing particulate matter transfer. A micro-environment container is sealed within the upper chamber and a vacuum simultaneously produced in both upper and lower chambers. A movable carrier plate opens the micro-environment container and removes a cassette of wafers from therein and into the lower chamber. The micro-environment container remains supported by the separator and forms an impermeable barrier between the chambers. Wafers are transferred from the cassette to the process environment, and returned to the cassette after processing has been completed. The carrier plate returns the cassette containing the processed wafers to the micro-environment container for removal from the load lock chamber.

Abstract: An electrostatic chuck includes a pedestal having a metallic upper surface, and a layer of a porous dielectric material formed on said upper surface of the pedestal. The dielectric layer is impregnated with a plasma-resistant sealant.

Abstract: An adaptive controller for controlling the temperature of a body. The adaptive controller of the present invention comprises a temperature measuring device which measures the temperature of the body. A controller which has a controller integral time constant and a controller gain constant is provided for controlling a heating device. An adjustment mechanism is provided which determines the controller integral time constant and the controller gain constant where the controller integral time constant and the controller gain constant are dependent upon the difference between the present temperature of the body and the desired temperature of the body.

Abstract: A substrate processing system including a vacuum chamber; a pedestal which holds a substrate during processing; and a gas distribution structure which during processing is located adjacent to and distributes a process gas onto a surface of the substrate that is held on the pedestal for processing. The gas distribution structure includes a gas distribution faceplate including a plurality of gas distribution holes formed therethrough, wherein the holes of at least a first set of the plurality of holes pass through the faceplate at angles other than perpendicular to the surface of substrate.