Abstract: In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 ? and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.

Abstract: A tool for removing a quartz insert from an exhaust port of a semiconductor process chamber. In one embodiment, the tool of the present invention comprises a pair of generally elongated members (a first elongated member and a second elongated member) that are hingedly attached at a middle portion of each member. The first elongated member includes a first handle portion and a first end portion that are located on opposite ends of the middle portion of the elongated member. The second elongated member includes a second handle portion and a second end portion. The first and second handle portions are of sufficient length so as to be gripped by a user. A first head and a second head are pivotally attached to the first and second end portion of the first and second elongated members, respectively.