Abstract: An apparatus and a method for electrically testing a semiconductor wafer, the method including: (i) depositing electrical charges at certain points of a test pattern; (ii) scanning at least a portion of the test pattern such as to enhance charge differences resulting from defects; and (iii) collecting charged particles emitted from the at least scanned portion as a result of the scanning, thus providing an indication about an electrical state of the respective test structure.

Abstract: Apparatus for optical inspection of a sample includes a radiation source, adapted to irradiate a spot on the sample with coherent radiation, and collection optics, adapted to collect the radiation scattered from the spot so as to form a beam of scattered radiation. A diffractive optical element (DOE) is positioned to intercept the beam of scattered radiation and is adapted to deflect a first portion of the beam by a predetermined offset relative to a second portion of the beam, and then to optically combine the first portion with the second portion to generate a product beam. A detector is positioned to receive the product beam and to generate a signal responsive thereto, which is processed by a signal processor so as to determine an autocorrelation value of the product beam.

Abstract: A method for removing a particle from a substrate includes forming a layer of a fluid on a surface of an optical element and positioning the optical element in proximity to a location of the particle on the substrate. A pulse of electromagnetic radiation is directed to impinge on the surface of the optical element so as to induce explosive evaporation of the fluid thereon, whereby a pressure wave is emitted toward the location of the particle.

Abstract: An amplifier circuit (200) having an amplifier chain comprising an input port (215) and an output port (235) with a plurality of interconnected gain stages (220-227) therebetween, where the output of one stage provides an input to the next stage within the amplifier chain, the output port (235) being operably coupled to the plurality of interconnected gain stages (220-227) such that the amplifier circuit output is generated from any one or more of the interconnected gain stages (220-227).

Abstract: An optical system for detecting defects on a wafer that includes a device for producing a beam and directing the beam onto the wafer surface, producing an illuminated spot on the wafer's surface. The system further includes a detector detecting light, and a mirrored assembly having together with the detector an axis of symmetry about a line perpendicular to the wafer surface. The assembly is configured to receive scattered light from the surface, where the scattered light including a first scattered light part being scattered from the pattern. The assembly is further configured to reflect and focus rotationally symmetrically about the axis of symmetry the scattered light to the detector. The system further includes a device operating with the detector for facilitating detection of a scattered light other than the specified scattered light due to pattern.

Abstract: A process chamber for processing or inspecting a substrate such as a semiconductor wafer and the like includes a internal chamber employing dynamic seals at the interface of relatively moving elements. In one embodiment, the internal chamber has a first element, such as a lid or cover, and a second element, such as the body of the chamber. The first element and the second element meet at the interface. The internal chamber may further include a substrate support, mounted inside the internal chamber, supporting a substrate. A first movement system may produce at least one type of relative movement between the first element and the second element. A second movement system may produce second relative movement between the second element and the substrate support. The resulting structure allows movement of the chamber, while maintaining pressure inside the chamber.

Abstract: A method for production testing includes receiving a wafer including a semiconductor substrate and a non-conducting layer formed over the substrate, following etching of contact openings through the non-conducting layer to the substrate, the contact openings including an array of the contact openings arranged in a predefined test pattern in a test area on the wafer. An electron beam is directed to irradiate the test area, a specimen current flowing through the substrate responsive to the electron beam is measured. The specimen current is analyzed so as to assess a dimension of the contact openings.

Abstract: Apparatus for analysis of a thin film formed over an underlying layer on a surface of a sample, the thin film including first elements, while the underlying layer includes second elements. The apparatus includes an electron gun, which directs a beam of electrons to impinge on a point on the surface of the sample at which the thin film is formed. An electron detector receives Auger electrons emitted by the first and second elements responsive to the impinging beam of electrons, and to output a signal indicative of a distribution of energies of the emitted electrons. A controller receives the signal and analyzes the distribution of the energies so as to determine a composition of the first elements in the thin film and a thickness of the thin film.