Abstract: A method and a light detector that includes (i) a photon to electron converter a photon to one or more photoelectrons; (ii) a photoelectron detection circuit that includes a photoelectron sensing region; (iii) a chamber; (iv) a bias circuit that is configured to supply to the light detector one or more biasing signals for accelerating a propagation of the one or more photoelectrons within the chamber and towards the photoelectron sensing region; (iv) a photoelectron manipulator that is configured to operate in a selected operational mode out of multiple operational modes that differ by their level of blocking, (v) a controller that is configured to control the photoelectron manipulator based on a feedback about the at least one of (a) the photon, (b) the one or more photoelectrons, (c) a previous photon and, (d) previous one or more photoelectrons.

Abstract: Apparatus and methods for measuring the proximity between two components using a hardstop, an actuator and an emitter/detector passing light through a passage in the actuator are disclosed. The passage provides attenuation to the light which changes as the gap between the components changes allowing the measurement and control of the gap. Methods of determining the topology of the components using the apparatus are also described.

Abstract: A substrate carrier door assembly including relatively high sealing force that can be modulated. Substrate carrier door assembly includes a carrier door configured to seal to a carrier body, a first attraction member on the carrier body, and a second attraction member on the carrier door. Attraction members are selected from a group of a magnetic material and a permanent magnet. Substrate carrier door assembly includes a magnetic field generator energizable to reduce attraction force between the attraction members making the carrier door relatively easier to remove, yet providing enhanced sealing when not energized. Substrate carriers including the substrate carrier door assembly and methods of processing substrates are provided. A substrate carrier including a port configured to allow gas to be injected into, or removed from, a carrier chamber, and a magnetic port seal is also disclosed, as are numerous other aspects.

Abstract: To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, Al2O3, or SiC is provided and a ceramic coating is coated on the body, wherein the ceramic coating includes a compound of Y2O3, Al2O3, and ZrO2. The ceramic coating is applied to the body by a method including providing a plasma spraying system having a plasma current in the range of between about 100 A to about 1000 A, positioning a torch standoff of the plasma spraying system a distance from the body between about 60 mm and about 250 mm, flowing a first gas through the plasma spraying system at a rate of between about 30 L/min and about 400 L/min, and plasma spray coating the body to form a ceramic coating, wherein splats of the coating are amorphous and have a pancake shape.

Abstract: A substrate for use in fabrication of an integrated circuit has a layer with a plurality of conductive interconnects. The substrate includes a semiconductor body, a dielectric layer disposed over the semiconductor body, a plurality of conductive lines of a conductive material disposed in first trenches in the dielectric layer to provide the conductive interconnects, and a closed conductive loop structure of the conductive material disposed in second trenches in the dielectric layer. The closed conductive loop is not electrically connected to any of the conductive lines.

Abstract: A magnetic handling assembly for thin-film processing of a substrate, a system and method for assembling and disassembling a shadow mask to cover a top of a workpiece for exposure to a processing condition. The assembly may include a magnetic handling carrier and a shadow mask disposed over, and magnetically coupled to, the magnetic handling carrier to cover a top of a workpiece that is to be disposed between the shadow mask and the magnetic handling carrier when exposed to a processing condition. A system includes a first chamber with a first support to hold the shadow mask, a second support to hold a handling carrier, and an alignment system to align the shadow mask a workpiece to be disposed between the carrier and shadow mask. The first and second supports are moveable relative to each other.

Abstract: Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask in EUV applications and phase shift and binary photomask applications. In one embodiment, a method of etching an absorber layer disposed on a photomask includes transferring a film stack into an etching chamber, the film stack having a chromium containing layer partially exposed through a patterned photoresist layer, providing an etching gas mixture including Cl2, O2 and at least one hydrocarbon gas in to a processing chamber, wherein the Cl2 and O2 is supplied at a Cl2:O2 ratio greater than about 9, supplying a RF source power to form a plasma from the etching gas mixture, and etching the chromium containing layer through the patterned photoresist layer in the presence of the plasma.

Abstract: Apparatus and methods of dimension control and monitoring between a processes fixture and a susceptor, and position determination of wafers are described.

Abstract: In some embodiments, methods and systems are provided for improved handling of lithography masks including loading a mask via a first load port from a first carrier; inverting the mask using a first contact pad; cleaning the mask; inverting the mask using a second contact pad; and unloading the mask via a second load port into a second carrier. Numerous other aspects are provided.

Abstract: A processing apparatus for processing devices, particularly devices including organic materials therein, is described. The processing apparatus includes a processing vacuum chamber; at least one evaporation source for organic material, wherein the at least one evaporation source includes at least one evaporation crucible, wherein the at least one evaporation crucible is configured to evaporate the organic material, and at least one distribution pipe with one or more outlets, wherein the at least one distribution pipe is in fluid communication with the at least one evaporation crucible; and a maintenance vacuum chamber connected with the processing vacuum chamber, wherein the at least one evaporation source can be transferred from the processing vacuum chamber to the maintenance vacuum chamber and from the maintenance vacuum chamber to the processing vacuum chamber.

Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.

Abstract: Apparatus and methods for processing a semiconductor wafer including a susceptor assembly with recesses comprising at least three lift pins. The lift pins include a sleeve with a spring and pin positioned therein. The spring and pin elevate the wafer to a position where the wafer can be pre-heated and, upon compression, lowers the wafer to a processing position.

Abstract: Electronic device processing systems including environmental control of the factory interface are described. One electronic device processing system has a factory interface having a factory interface chamber, a load lock apparatus coupled to the factory interface, one or more substrate carriers coupled to the factory interface, and an environmental control system coupled to the factory interface and operational to monitor or control one of: relative humidity, temperature, an amount of oxygen, or an amount of inert gas within the factory interface chamber. In another aspect, purge of a carrier purge chamber within the factory interface chamber is provided. Methods for processing substrates are described, as are numerous other aspects.

Abstract: Vacuum chambers having inflatable slit valve opening seals are described herein. In one example, a vacuum chamber includes a chamber body, a first inflatable seal, and a first slit valve door. The chamber body has a top, a bottom, and sidewalls. A first slit valve opening is formed in the sidewalls. The first inflatable seal is sealingly coupled to the sidewall and circumscribes the first slit valve opening. The first inflatable seal has a base coupled to the sidewall and a hollow tubular portion that can move laterally relative to the base. The first slit valve door is moveable between a close state that contacts the first inflatable seal to provide a vacuum seal between the first slit valve door and chamber body, and an open state that positions the first slit valve door clear of the first slit valve opening.

Abstract: In systems and methods for removing a photoresist film off of a wafer, the wafer is moved into a bath of a process liquid in a process tank. The process liquid removes the photoresist film from the wafer. The process liquid is pumped from the process tank to a filter assembly and moved through filter media to filter out solids from the process liquid, and the filtered process liquid is returned to the process tank. A scraper scrapes the filter media to prevent clogging of the filter media by accumulated solids.

Abstract: The present invention relates generally to electrochemical energy storage devices such as Li-ion batteries, and more particularly to a method of providing uniform ceramic coatings with controlled thicknesses for separators in such storage devices. Some embodiments of the invention utilize a layer by layer coating of nano/micro-sized particles dispersed in a solvent, which can be aqueous or non-aqueous. Other embodiments of the invention utilize a dry process such as PVD for depositing a ceramic film on a porous polyolefin separator. According to certain aspects of the invention, advantages of this approach include the ability to achieve a denser more uniform film with better controlled thickness with less waste and higher yield than current ceramic coating technology. An advantage of a ceramic coated separator is increased safety of cells.

Abstract: Embodiments of the present disclosure provide methodology to match and calibrate processing chamber performance in a processing chamber. In one embodiment, a method for calibrating a processing chamber for semiconductor manufacturing process includes performing a first predetermined process in a processing chamber, collecting a first set of signals transmitted from a first group of sensors disposed in the processing chamber to a controller while performing the predetermined process, analyzing the collected first set of signals, comparing the collected first set of signals with database stored in the controller to check sensor responses from the first group of sensors, calibrating sensors based on the collected first set of signals when a mismatch sensor response is found, subsequently performing a first series of processes in the processing chamber, and collecting a second set of signals transmitted from the sensors to the controller while performing the series of processes.

Abstract: Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon (DLC), yttria stabilized zirconia, nickel, alumina, or aluminum silicon magnesium yttrium oxygen compound. In one embodiment, the chamber component is a valve having an internal bellows.

Abstract: Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Abstract: Examining an object, comprising: receiving potential defects, each associated with a location; performing first clustering of the potential defects to obtain first and second subsets, the clustering performed such that potential defects in the first subset are denser in a physical area than potential defects in the second subset; automatically assigning first validity probabilities to potential defects in the first and second subsets; selecting for review potential defects from the first and second subsets, according to a third policy, and in accordance with a strategy for combining top elements and randomly selected elements from the merged list; receiving indications for potential defects in part of the potential defect lists, subsequent to potential defects being reviewed; updating the policies in accordance with validation or classification of items in the first and second subsets; and repeating said assigning, selecting, receiving and updating with the updated policies, until a stopping criteria is obser