Abstract: Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a lid assembly for conducting a vapor deposition process within a process chamber is provided which includes an insulation cap and a plasma screen. In one example, the insulation cap has a centralized channel configured to flow a first process gas from an upper surface to an expanded channel and an outer channel configured to flow a second process gas from an upper surface to a groove which is encircling the expanded channel. In one example, the plasma screen has an upper surface containing an inner area with a plurality of holes and an outer area with a plurality of slots. The insulation cap may be positioned on top of the plasma screen to form a centralized gas region with the expanded channel and a circular gas region with the groove.
Type:
Grant
Filed:
November 6, 2006
Date of Patent:
December 14, 2010
Assignee:
Applied Materisals, Inc.
Inventors:
Paul Ma, Kavita Shah, Dien-Yeh Wu, Seshadri Ganguli, Christophe Marcadal, Frederick C. Wu, Schubert S. Chu