Abstract: Gate all-around devices are disclosed in which an angled channel comprising a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1° to less than about 90°. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.
Type:
Grant
Filed:
March 13, 2020
Date of Patent:
June 1, 2021
Assignee:
Applied Materrials, Inc.
Inventors:
Russell Chin Yee Teo, Benjamin Colombeau