Abstract: A method for at least partially filling a feature on a workpiece includes obtaining a workpiece including a feature having a high aspect ratio in the range of about 10 to about 80, depositing a first conformal conductive layer in the feature, and thermally treating the workpiece to reflow the first conformal conductive layer in the feature.

Abstract: Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. Both the reflowed resist and the substrate are concurrently etched to transfer the tapered profile of the reflowed resist into the underlying substrate to form an angled surface. The etching is discontinued before all of the resist is consumed by the etching.

Abstract: Systems and methods for in-situ monitoring of the formation of parasitic particles during the deposition of a III-V nitride film with, e.g., metal-organic chemical vapor deposition (MOCVD) are described. In accordance with certain embodiments, at least one light source capable of generating a light beam at a desired wavelength is positioned relative to a reaction chamber so as to pass a light beam into the reaction chamber. Multiple optical detectors capable of detecting light from the beam are positioned relative to the reaction chamber to monitor desired reaction and growth conditions. More particularly, a first optical detector is positioned so as to detect light reflected from a deposition surface within the reaction chamber so as to monitor growth rate and/or composition of a film during deposition.

Abstract: An electron beam source has a photocathode with a photoemitter material having a work function, and with a beam receiving portion and an electron emitting portion. A first light source directs a first light beam onto the beam receiving portion of the photocathode to generate an electron beam from the electron emitting portion. The first light beam has a wavelength ?1 such that hc/?1 is at least about the work function of the photoemitter material, where ‘h’ is Planck's constant and ‘c’ is the speed of light. A second light source directs a second light beam onto the beam receiving portion of the photocathode, such as onto the beam receiving portion, to stabilize the electron beam. The second light beam having a wavelength ?2 such that hc/?2 is less than about the work function of the photoemitter material.

Abstract: A storage surface for a semiconductor substrate carrier has substrate carrier sensors that are integrated with locator pins. Each locator pin includes a pin body mounted on, and extending upwardly from, the surface. The pin body has a slot formed at an upper portion of the pin body. A paddle is mounted in the slot of the pin body and is adapted to be actuated in a downward direction when a substrate carrier is seated on the pin body. The pin body has an uppermost point, and when the paddle is unactuated, the paddle does not extend above the uppermost point of the pin body.