Patents Assigned to Applied Microwave Plasma Concepts, Inc.
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Patent number: 5707452Abstract: A method and apparatus are disclosed employing a microwave applicator for use with an electron cyclotron resonance (ECR) plasma source for applications including, but not limited to, etching and chemical vapor deposition. A magnetic field is generated by magnets circumferentially arranged about a chamber that is symmetrical about its longitudinal axis. The microwave applicator, which comprises one or more pairs of slotted antenna arrays, injects and distributes microwave power about the entire periphery of a plasma forming portion of the chamber. The antenna arrays include a plurality of radiating stubs for radiating microwave power. The stubs are positioned along the arrays at predetermined intervals for efficiently distributing microwave power uniformly about the periphery of the plasma forming portion. The position and orientation of the radiating stubs cause microwave power to be launched into the plasma in the form of propagating waves with a polarization suitable of electron cyclotron heating.Type: GrantFiled: July 8, 1996Date of Patent: January 13, 1998Assignee: Applied Microwave Plasma Concepts, Inc.Inventor: Raphael A. Dandl
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Patent number: 5370765Abstract: A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons with a specimen being treated. The microwave power is distributed uniformly around the circumference of the chamber by applicators formed by one or more pairs of annular sectors, each of which comprises a slotted wave guide antenna, and coupled to an external source of microwave power by a hybrid coupler. A magnetic field free region produces uniformity of plasma distribution in a plasma stream approaching the outlet. The above characteristics are maintained for the plasma stream over substantial transverse dimensions larger than the specimen.Type: GrantFiled: April 16, 1993Date of Patent: December 6, 1994Assignee: Applied Microwave Plasma Concepts, Inc.Inventor: Raphael A. Dandl
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Patent number: 5203960Abstract: A method is disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons through an outlet at one axial end of the chamber. The circumferential magnets in the symmetrical chamber cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low gas pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics.Type: GrantFiled: April 29, 1992Date of Patent: April 20, 1993Assignee: Applied Microwave Plasma Concepts, Inc.Inventor: Raphael A. Dandl
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Patent number: 5133826Abstract: A method and apparatus are disclosed employing electron cyclotron resonant (ECR) heating to produce plasma for applications including but not limited to chemical vapor deposition and etching. A magnetic field is formed by magnets circumferentially arranged about a cylindrical and symmetrical chamber with microwave power injected perpendicularly to a longitudinal axis of the chamber for preventing line-of-sight communication of resulting energetic electrons through an outlet at one axial end of the chamber. The circumferential magnets in the symmetrical chamber cause precessing of the electrons resulting in greatly increased plasma density and ion flux or current density even at low gas pressures which are preferably maintained for establishing unidirectionality or anisotropic plasma characteristics.Type: GrantFiled: March 9, 1989Date of Patent: July 28, 1992Assignee: Applied Microwave Plasma Concepts, Inc.Inventor: Raphael A. Dandl
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Patent number: 5003225Abstract: A method and apparatus are disclosed for producing microwave radiation wherein a generally stable, high-beta, relativistic electron plasma is formed in a static magnetic field of a suitable enclosure either by an external microwave source or in situ within the plasma by means of at least one pair of steady-state interacting energetic electron beams, a convectively unstable wave then being created in the confined plasma either internally in an oscillator mode or externally in an amplifier mode by means of an external launcher for producing a pulse of relatively intense microwave radiation at a frequency near a local electron gyrofrequency. The above steps or functions are preferably sequentially repeated with sequential pulses of microwave radiation being withdrawn from the enclosure, focused by quasi-optical means and directed toward a target including electronic circuitry, so that the beam of sequential pulses is coupled into the electronic circuitry for developing substantial amounts of energy therein.Type: GrantFiled: January 4, 1989Date of Patent: March 26, 1991Assignee: Applied Microwave Plasma Concepts, Inc.Inventor: Raphael A. Dandl
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Patent number: 4733133Abstract: A method and apparatus are disclosed for producing microwave radiation wherein a generally stable, high-beta, relativistic electron plasma is formed and magnetically confined in a magnetic mirror region of a suitable enclosure, a convectively unstable wave then being created in the confined plasma for producing a pulse of relatively intense microwave radiation at a frequency near a local electron gyrofrequency of the plasma, the plasma preferably being formed by simultaneous multiple-frequency electron cyclotron heating and upper off-resonant heating using microwave power at frequencies above the electron gyrofrequency of the plasma.Type: GrantFiled: November 26, 1985Date of Patent: March 22, 1988Assignee: Applied Microwave Plasma Concepts, Inc.Inventor: Raphael A. Dandl
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Patent number: 4641060Abstract: A method and apparatus is disclosed for producing a gas pumping plasma within an evacuated enclosure having a collimating system consisting of baffle structures and a magnetic field having a central uniform region connected to a source of neutral gas, a magnetic mirror intermediate region and a terminating divergent region. According to the method and apparatus of the present invention, the enclosure is evacuated to a selected pressure, high frequency microwave energy of a selected power and frequency is fed into the magnetic mirror intermediate region, the magnetic field is established at a strength such that an electron cyclotron frequency is made equal to the frequency of the microwave energy within the intermediate region, electrons within the magnetic mirror intermediate region being heated by the microwave energy, the heated electrons ionizing the neutral gas in the intermediate and central regions for creating and maintaining a pumping plasma.Type: GrantFiled: February 11, 1985Date of Patent: February 3, 1987Assignee: Applied Microwave Plasma Concepts, Inc.Inventor: Raphael A. Dandl