Abstract: Methods and systems include constructing and operating a semiconductor device with a mid-band dopant layer. In various implementations, carriers that are optically excited in a mid-band dopant region may provide injection currents that may reduce transition times and increase achievable operating frequency in a bipolar junction transistor (BJT). In various implementations, carriers that are optically excited in a mid-band dopant region within a thyristor may improve closure transition time, effective current spreading velocity, and maximum rate of current rise.

Abstract: An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

Abstract: An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

Abstract: A compact Marx-type generator capable of producing high voltage pulses into low impedance loads. A parallel switch and distributed capacitance topology produce a coaxial-like conduction through the Marx-like circuit, resulting in a low source impedance. The parallel switching topology also lends itself to high repetition rates. Without loss of generality the device may be used, for example, as a source for vacuum diode loads, such as in flash radiography and high power microwaves.