Abstract: Methods and systems include constructing and operating a semiconductor device with a mid-band dopant layer. In various implementations, carriers that are optically excited in a mid-band dopant region may provide injection currents that may reduce transition times and increase achievable operating frequency in a bipolar junction transistor (BJT). In various implementations, carriers that are optically excited in a mid-band dopant region within a thyristor may improve closure transition time, effective current spreading velocity, and maximum rate of current rise.

Abstract: An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

Abstract: A high power laser whose output is a matrix of individual phase controlled pixels is disclosed, each pixel containing a number of low power, single transverse mode, phase coherent gain channel outputs. Each row of pixels is formed as an optical pump waveguide that is transverse or orthogonal to a number of parallel, longitudinal gain channels integrated within or adjacent to the transverse pump waveguide. Optical pump energy is produced and injected by a number of parallel laser diode bars, located along both longitudinal sides of the pump waveguide. Waste thermal energy from the pump diodes and gain channels is extracted from each laser row by integrating the row pump waveguide, gain channels, and pump diodes within a heat exchanger.

Abstract: An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

Abstract: An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a current blocking mode to a current conduction mode in a planar electron avalanche. This switch structure and the method of optically initiating the switch closure is applicable to conventional semiconductor switch configurations that employ a reverse-biased PN junction, including, but not limited to, thyristors, bipolar transistors, and insulated gate bipolar transistors.

Abstract: A compact Marx-type generator capable of producing high voltage pulses into low impedance loads. A parallel switch and distributed capacitance topology produce a coaxial-like conduction through the Marx-like circuit, resulting in a low source impedance. The parallel switching topology also lends itself to high repetition rates. Without loss of generality the device may be used, for example, as a source for vacuum diode loads, such as in flash radiography and high power microwaves.

Abstract: A compact Marx-type generator capable of producing high voltage pulses into low impedance loads. A parallel switch and distributed capacitance topology produce a coaxial-like conduction through the Marx-like circuit, resulting in a low source impedance. The parallel switching topology also lends itself to high repetition rates. Without loss of generality the device may be used, for example, as a source for vacuum diode loads, such as in flash radiography and high power microwaves.