Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).

Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).

Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).

Abstract: Compositions and methods for the removal of selenium species from water containing high-salt concentrations and/or petroleum contaminants are described. The compositions and methods use a selenium-reducing microorganism adapted to adverse environments.

Abstract: A method for inhibiting formation of hexavalent chromium during oxidative remediation of a contaminated site containing trivalent chromium is described. The method comprises introducing ozone at a first point to the contaminated site, where the ozone is introduced at a first frequency and for a first period of time, and introducing hydrogen peroxide to the contaminated site, where the hydrogen peroxide is introduced at a second frequency and for a second period of time. The first and second frequencies and first and second periods of time are selected to inhibit formation of hexavalent chromium within the site of remediation.

Abstract: Innovative methods and systems for the removal and destruction of contaminants present in reclaimed or other waste water are described.

Abstract: A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle extending outwardly therefrom to emit the ion beam. The aperture or outlet of the nozzle has a second width, which second width is less than the first width. An ionizable gas is introduced to the discharge cavity. At least one electrode connected to the AC power supply, alternatively serving as an anode or a cathode, is capable of supporting at least one magnetron discharge region within the discharge cavity when serving as a cathode electrode. A plurality of magnets generally facing one another, are disposed adjacent each discharge cavity to create a magnetic field null region within the discharge cavity.

Abstract: A system and method for the in-situ removal or remediation of contaminants in a soil formation containing a subsurface groundwater aquifer, the method comprising the steps of: injecting a first oxidant into the aquifer at an injection point to create a volume of influence of the first oxidant in the aquifer thereby treating the contaminants contained within the volume of influence; and injecting a compressed gas into the aquifer to increase the size of the volume of influence of the first oxidant. The injection of the compressed gas into the aquifer can also force the groundwater in the aquifer away from the injection point into a surrounding area to transport the first oxidant into the surrounding area thereby extracting contaminants from soil adjacent to the surrounding area.

Abstract: A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture extending through the top portion and into the discharge cavity, wherein the aperture has a second width, where the second width is less than the first width. The plasma source further includes a power supply, a conduit disposed in the discharge cavity for introducing an ionizable gas therein, and at least one cathode electrode connected to the power supply, where that cathode electrode is capable of supporting at least one magnetron discharge region within the discharge cavity. The plasma source further includes a plurality of magnets disposed adjacent the wall portion, where that plurality of magnets create a null magnetic field point within the discharge cavity.

Abstract: The preferred embodiments described herein provide a Penning discharge plasma source. The magnetic and electric field arrangement, similar to a Penning discharge, effectively traps the electron Hall current in a region between two surfaces. When a substrate (10) is positioned proximal to at least one of the electrodes (11, 12) and is moved relative to the plasma, the substrate (10) is plasma treated, coated or otherwise modified depending upon the process gas used and the process pressure. This confinement arrangement produces dramatic results not resembling known prior art. Using this new source, many applications for PECVD, plasma etching, plasma treating, sputtering or other plasma processes will be substantial improved or made possible. In particular, applications using flexible webs (10) are benefited.

Abstract: A system and method for the in-situ removal or remediation of contaminants in a soil formation containing a subsurface groundwater aquifer, the method comprising the steps of: injecting a first oxidant into the aquifer at an injection point to create a volume of influence of the first oxidant in the aquifer thereby treating the contaminants contained within the volume of influence; and injecting a compressed gas into the aquifer to increase the size of the volume of influence of the first oxidant. The injection of the compressed gas into the aquifer can also force the groundwater in the aquifer away from the injection point into a surrounding area to transport the first oxidant into the surrounding area thereby extracting contaminants from soil adjacent to the surrounding area.

Abstract: A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed on the open end of the channel and extends therefrom in a second direction, where the first direction is opposite to the second direction. The distal ends of the first magnetic pole and the second magnetic pole define a gap comprising the opening in the first end. An anode is disposed within the channel. A primary magnetic field line is disposed between the first magnetic pole and the second magnetic pole, where that primary magnetic field line has a mirror field greater than 2.

Abstract: A magnetic mirror plasma (77) source comprises two surfaces separated by a gap wherein one of the surfaces is a wafer (76) and the other surface is a cathode. The apparatus comprises a cover (72), target (83), shunt (74, 81), non-magnetic stage (75), magnet array (80), bias supply (82), and power supply (70). A mirror magnetic field (12) extends between the surfaces through the gap, wherein the magnetic field (78) lines at the substrate surface are at least two times as strong as those field lines entering the cathode. An anode is disposed such that a closed loop electron Hall current containment region is formed within the magnetic field, where with sufficient gas pressure and voltage between the cathode and anode, plasma is formed in the containment region. The result is a novel plasma source that has unique and important advantages enabling advancements in PECVD, etching, sputtering and plasma treatment processes.

Abstract: A point projection type flood plasma source implements a magnetron sputter cold cathode electron source in a discharge cavity separated from a process chamber by a narrow conduit and a solenoid magnetic field. The solenoid magnetic field impedes radial electron flow in the nozzle and the process chamber. Process gas flows into the discharge cavity and through the nozzle to the process chamber. This gas is ionized in the nozzle and the process chamber by electrons trapped in the solenoid magnetic field. The result is a dense plasma plume in the process chamber useful for a number of applications. The source has particular advantages for reactive gas processes such as those requiring oxygen.

Abstract: A chill drum (14) is modified to improve heat transfert between the drum and a flexible web substrate (20) disposed around the drum. The drum surface (22) contains a series of passages (44) and distribution holes (46). A working gas is injected into these passages and flows out of the distribution holes into the space between the web and drum. A cover (32) prevents working gas from escaping from frum passages in the area not covered by the web, and supplies the working gas to the passages at the drum cover. Once gas is in the passages, leakage only occurs from the edges of the web. The pressure in the passages remains essentially constant around the drum, producing uniform elevated pressures under the entire web. Elevated pressure behind the web significantly improves overall heat transfert, thereby allowing higher deposition rates and other process advantages.

Abstract: A dipole ion source (FIG. 1) includes two cathode surfaces, a substrate (1) and a pole (3); wherein a gap is defined between the substrate and the pole; an unsymmetrical mirror magnetic field including a compressed end, wherein the substrate is positioned in the less compressed end of the magnetic field; and an anode (4) creating an electric field penetrating the magnetic field and confining electrons in a continuous Hall current loop, wherein the unsymmetrical magnetic field serves an ion beam on the substrate.

Abstract: A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed on the open end of the channel and extends therefrom in a second direction, where the first direction is opposite to the second direction. The distal ends of the first magnetic pole and the second magnetic pole define a gap comprising the opening in the first end. An anode is disposed within the channel. A primary magnetic field line is disposed between the first magnetic pole and the second magnetic pole, where that primary magnetic field line has a mirror field greater than 2.

Abstract: Magnetically enhanced glow discharge devices are disclosed for the purpose of PECVD, etching or treating a substrate in a vacuum chamber. Two cathode surfaces are separated by a gap. A mirror magnetic field emanates from the cathode surfaces and passes through the gap. An anode structure forms diverging electric fields from each cathode to the anode, where the electric fields pass through the magnetic field 360 degrees around the dipole magnetic field. A closed loop electron trap is formed by the diverging electric fields and the expanding magnetic field in the gap. With a chamber pressure in the range of 0.1 to 100 mTorr and an applied voltage between the cathode and anode surfaces, a plasma is formed in the electron trap and in the plane of the trap. By shaping the plasma poles and exposing the sides of the cathode surfaces to the substrate, the created Hall current of the plasma can be brought into direct contact with the substrate.

Abstract: Oxidizable contaminants in water are destroyed rapidly and efficiently by exposing the water to oxidizing conditions under pressure. Specifically, a single dose of hydrogen peroxide may be injected into the water, followed by the repeated injection and mixing of low doses of ozone. In each such high intensity mixing/reaction stage, ozone is injected at a pressure, velocity, and direction approximately matching that of the contaminated water flow. High intensity mixing under pressure facilitates rapid and complete oxidation of the contaminants with minimal stripping of volatile contaminants and waste of undissolved ozone. Residual ozone levels after high intensity mixing may be carefully monitored and minimized by adjusting the injection of hydrogen peroxide and ozone in order to suppress the formation of bromate. Additional contaminants may be removed by passing the treated water through activated carbon beds.

Abstract: A method for detecting the end point of etching wafers and the like by reflective means. Typically, a detected reflectance signal will have a threshold level representing a lack of substantial etching, a dip in the threshold level representing the commencement of etching and an inflection level representing a maximum rate of light amplitude change. The present method involves subtracting the inflection level from the threshold level and taking a predetermined fraction of the resultant level to define a second threshold level further in the etch cycle which anticipates the end of the cycle. By observational experience, the predetermined fraction can be determined. As soon as the second threshold level is reached, brakes are applied to the etching process so that etching will cease shortly after the predetermined level has been identified.