Patents Assigned to Applied Process Technology, Inc.
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Publication number: 20110186508Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).Type: ApplicationFiled: March 21, 2011Publication date: August 4, 2011Applicant: Applied Process Technology, Inc.Inventor: Reid Bowman
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Patent number: 7931807Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).Type: GrantFiled: October 8, 2009Date of Patent: April 26, 2011Assignee: Applied Process Technology, Inc.Inventor: Reid Bowman
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Patent number: 7618537Abstract: Apparatus and methods for water treatment are described, particularly for the simultaneous removal of nitrate, perchlorate, and other organic contaminates from contaminated water using a membrane biofilm reactor (MBfR).Type: GrantFiled: March 28, 2008Date of Patent: November 17, 2009Assignee: Applied Process Technology, Inc.Inventor: Reid Bowman
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Publication number: 20090152194Abstract: Compositions and methods for the removal of selenium species from water containing high-salt concentrations and/or petroleum contaminants are described. The compositions and methods use a selenium-reducing microorganism adapted to adverse environments.Type: ApplicationFiled: December 4, 2008Publication date: June 18, 2009Applicant: Applied Process Technology, Inc.Inventors: Charles Borg, David Friese, Tyze-Kuan Tim Yin
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Publication number: 20090039031Abstract: A method for inhibiting formation of hexavalent chromium during oxidative remediation of a contaminated site containing trivalent chromium is described. The method comprises introducing ozone at a first point to the contaminated site, where the ozone is introduced at a first frequency and for a first period of time, and introducing hydrogen peroxide to the contaminated site, where the hydrogen peroxide is introduced at a second frequency and for a second period of time. The first and second frequencies and first and second periods of time are selected to inhibit formation of hexavalent chromium within the site of remediation.Type: ApplicationFiled: July 2, 2008Publication date: February 12, 2009Applicant: Applied Process Technology, INC.Inventors: Douglas C. Gustafson, Reid H. Bowman
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Publication number: 20090032471Abstract: Innovative methods and systems for the removal and destruction of contaminants present in reclaimed or other waste water are described.Type: ApplicationFiled: July 29, 2008Publication date: February 5, 2009Applicant: Applied Process Technology, Inc.Inventor: Charles Borg
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Publication number: 20080175671Abstract: A system and method for the in-situ removal or remediation of contaminants in a soil formation containing a subsurface groundwater aquifer, the method comprising the steps of: injecting a first oxidant into the aquifer at an injection point to create a volume of influence of the first oxidant in the aquifer thereby treating the contaminants contained within the volume of influence; and injecting a compressed gas into the aquifer to increase the size of the volume of influence of the first oxidant. The injection of the compressed gas into the aquifer can also force the groundwater in the aquifer away from the injection point into a surrounding area to transport the first oxidant into the surrounding area thereby extracting contaminants from soil adjacent to the surrounding area.Type: ApplicationFiled: August 31, 2007Publication date: July 24, 2008Applicant: Applied Process Technology, Inc.Inventors: Reid H. Bowman, Tom Lahey, Peter Herlihy
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Patent number: 7264419Abstract: A system and method for the in-situ removal or remediation of contaminants in a soil formation containing a subsurface groundwater aquifer, the method comprising the steps of: injecting a first oxidant into the aquifer at an injection point to create a volume of influence of the first oxidant in the aquifer thereby treating the contaminants contained within the volume of influence; and injecting a compressed gas into the aquifer to increase the size of the volume of influence of the first oxidant. The injection of the compressed gas into the aquifer can also force the groundwater in the aquifer away from the injection point into a surrounding area to transport the first oxidant into the surrounding area thereby extracting contaminants from soil adjacent to the surrounding area.Type: GrantFiled: March 19, 2004Date of Patent: September 4, 2007Assignee: Applied Process Technology, Inc.Inventors: Reid H. Bowman, Tom Lahey, Peter Herlihy
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Patent number: 6024882Abstract: Oxidizable contaminants in water are destroyed rapidly and efficiently by exposing the water to oxidizing conditions under pressure. Specifically, a single dose of hydrogen peroxide may be injected into the water, followed by the repeated injection and mixing of low doses of ozone. In each such high intensity mixing/reaction stage, ozone is injected at a pressure, velocity, and direction approximately matching that of the contaminated water flow. High intensity mixing under pressure facilitates rapid and complete oxidation of the contaminants with minimal stripping of volatile contaminants and waste of undissolved ozone. Residual ozone levels after high intensity mixing may be carefully monitored and minimized by adjusting the injection of hydrogen peroxide and ozone in order to suppress the formation of bromate. Additional contaminants may be removed by passing the treated water through activated carbon beds.Type: GrantFiled: August 5, 1998Date of Patent: February 15, 2000Assignee: Applied Process Technology, Inc.Inventors: Michael McNeilly, Reid Bowman, Terry Applebury, Doug Gustafson
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Patent number: 4317698Abstract: A method for detecting the end point of etching wafers and the like by reflective means. Typically, a detected reflectance signal will have a threshold level representing a lack of substantial etching, a dip in the threshold level representing the commencement of etching and an inflection level representing a maximum rate of light amplitude change. The present method involves subtracting the inflection level from the threshold level and taking a predetermined fraction of the resultant level to define a second threshold level further in the etch cycle which anticipates the end of the cycle. By observational experience, the predetermined fraction can be determined. As soon as the second threshold level is reached, brakes are applied to the etching process so that etching will cease shortly after the predetermined level has been identified.Type: GrantFiled: November 13, 1980Date of Patent: March 2, 1982Assignee: Applied Process Technology, Inc.Inventors: James T. Christol, John S. Burchard