Abstract: A panoramic imager comprising a mirror and a multi-scale imaging system is presented. The multi-scale imaging system comprises an objective lens and a plurality of cameras that is arranged in a non-planar arrangement at the image field of the objective lens. The objective lens reduces a first aberration introduced by the mirror, and each camera further reduces any residual first aberration. As a result, panoramic imagers of the present invention can provide improved image quality and higher resolution than panoramic imagers of the prior art.

Abstract: A panoramic imager comprising a mirror and a multi-scale imaging system is presented. The multi-scale imaging system comprises an objective lens and a plurality of cameras that is arranged in a non-planar arrangement at the image field of the objective lens. The objective lens reduces a first aberration introduced by the mirror, and each camera further reduces any residual first aberration. As a result, panoramic imagers of the present invention can provide improved image quality and higher resolution than panoramic imagers of the prior art.

Abstract: The present invention enables snap-shot spectral imaging of a scene at high image generation rates. Light from the scene is processed through an optical system that comprises a coded-aperture. The optical system projects a plurality of images, each characterized by only one of a plurality of spectral components, onto a photodetector array. The plurality of images is interspersed on the photodetector array, but no photodetector receives light characterized by more than one of the plurality of spectral components. As a result, computation of the spatio-spectral datacube that describes the scene is simplified. The present invention, therefore, enables rapid spectral imaging of the scene.

Abstract: A means of enabling an imaging lens system that overcomes some of the costs and disadvantages of the prior art is disclosed. A lens system in accordance with the present invention reduces or eliminates one or more aberrations of an optical input by separating image collection functionality from image processing functionality. As a result, each function can be performed without compromising the other function. An embodiment of the present invention comprises a collection optic that provides a first optical field, based on light from a scene, to a processing optic that comprises a plurality of lenslets. The processing optic tiles the first optical field into a plurality of second optical fields.

Abstract: The present invention enables snap-shot spectral imaging of a scene at high image generation rates. Light from the scene is processed through an optical system that comprises a coded-aperture. The optical system projects a plurality of images, each characterized by only one of a plurality of spectral components, onto a photodetector array. The plurality of images is interspersed on the photodetector array, but no photodetector receives light characterized by more than one of the plurality of spectral components. As a result, computation of the spatio-spectral datacube that describes the scene is simplified. The present invention, therefore, enables rapid spectral imaging of the scene.

Abstract: The present invention enables snap-shot spectral imaging of a scene at high image generation rates. Light from the scene is processed through an optical system that comprises a coded-aperture. The optical system projects a plurality of images, each characterized by only one of a plurality of spectral components, onto a photodetector array. The plurality of images is interspersed on the photodetector array, but no photodetector receives light characterized by more than one of the plurality of spectral components. As a result, computation of the spatio-spectral datacube that describes the scene is simplified. The present invention, therefore, enables rapid spectral imaging of the scene.

Abstract: In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

Abstract: In particular embodiments, a method is described for fabricating a photovoltaic cell and includes providing a substrate; depositing a bottom contact layer over the substrate; masking one or more portions of the bottom contact layer; depositing one or more photovoltaic absorber layers over the bottom contact layer; and depositing a top contact layer over the one or more photovoltaic absorber layers, wherein the one or more portions of the bottom contact layer are left exposed after depositing the one or more photovoltaic absorber layers and the top contact layer as a result of the masking thereby leaving the one or more portions of the bottom contact layer suitable for use as electrical contacts.

Abstract: In one example embodiment, a method includes sputtering one or more absorber layers over a substrate. In a particular embodiment, the substrate is pre-heated to a substrate temperature of at least approximately 300 degrees Celsius prior to the sputtering and during the sputtering of each of one or more of the absorber layers, and the sputtering of at least one of the absorber layers is performed in a sputtering atmosphere having a pressure of at least 0.5 Pascals. Additionally, in a particular embodiment, the sputtering of at least one of the absorber layers comprises sputtering from a sputter target that comprises a chalcogenide alloy that comprises copper (Cu) and one or more of sulfur (S), selenium (Se), or tellurium (Te).

Abstract: The present invention enables snap-shot spectral imaging of a scene at high image generation rates. Light from the scene is processed through an optical system that comprises a coded-aperture. The optical system projects a plurality of images, each characterized by only one of a plurality of spectral components, onto a photodetector array. The plurality of images is interspersed on the photodetector array, but no photodetector receives light characterized by more than one of the plurality of spectral components. As a result, computation of the spatio-spectral datacube that describes the scene is simplified. The present invention, therefore, enables rapid spectral imaging of the scene.

Abstract: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.

Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.

Abstract: A means of enabling an imaging lens system that overcomes some of the costs and disadvantages of the prior art is disclosed. A lens system in accordance with the present invention reduces or eliminates one or more aberrations of an optical input by separating image collection functionality from image processing functionality. As a result, each function can be performed without compromising the other function. An embodiment of the present invention comprises a collection optic that provides a first optical field, based on light from a scene, to a processing optic that comprises a plurality of lenslets. The processing optic tiles the first optical field into a plurality of second optical fields.

Abstract: In one example embodiment, a sputter target structure for depositing semiconducting chalcogenide films is described. The sputter target includes a target body comprising at least one chalcogenide alloy having a chalcogenide alloy purity of at least approximately 2N7, gaseous impurities less than 500 ppm for oxygen (O), nitrogen (N), and hydrogen (H) individually, and a carbon (C) impurity less than 500 ppm. In a particular embodiment, the chalcogens of the at least one chalcogenide alloy comprises at least 20 atomic percent of the target body composition, and the chalcogenide alloy has a density of at least 95% of the theoretical density for the chalcogenide alloy.

Abstract: An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.

Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.