Patents Assigned to Applied Quantum Technology, LLC
  • Publication number: 20100224247
    Abstract: In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.
    Type: Application
    Filed: March 4, 2010
    Publication date: September 9, 2010
    Applicant: Applied Quantum Technology, LLC
    Inventors: Brian Josef Bartholomeusz, Michael Bartholomeusz
  • Publication number: 20100224245
    Abstract: In particular embodiments, a method is described for depositing thin films, such as those used in forming a photovoltaic cell or device. In a particular embodiment, the method includes providing a substrate suitable for use in a photovoltaic device and plasma spraying one or more layers over the substrate, the grain size of the grains in each of the one or more layers being at least approximately two times greater than the thickness of the respective layer.
    Type: Application
    Filed: March 2, 2010
    Publication date: September 9, 2010
    Applicant: Applied Quantum Technology, LLC
    Inventors: Brian Josef Bartholomeusz, Michael Bartholomeusz
  • Publication number: 20090235983
    Abstract: An interlayer structure that, in one implementation, includes a combination of an amorphous or nano-crystalline seed-layer, and one or more metallic layers, deposited on the seed layer, with the fcc, hcp or bcc crystal structure is used to epitaxially orient a semiconductor layer on top of non-single-crystal substrates. In some implementations, this interlayer structure is used to establish epitaxial growth of multiple semiconductor layers, combinations of semiconductor and oxide layers, combinations of semiconductor and metal layers and combination of semiconductor, oxide and metal layers. This interlayer structure can also be used for epitaxial growth of p-type and n-type semiconductors in photovoltaic cells.
    Type: Application
    Filed: March 17, 2009
    Publication date: September 24, 2009
    Applicant: Applied Quantum Technology, LLC
    Inventors: Erol Girt, Mariana Rodica Munteanu
  • Publication number: 20080092945
    Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In a particular implementation, a photovoltaic cell includes a granular semiconductor and oxide layer with nanometer-size absorber semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer is disposed between electron and hole conducting layers. In some implementations, multiple semiconductor and oxide layers can be deposited.
    Type: Application
    Filed: October 24, 2007
    Publication date: April 24, 2008
    Applicant: Applied Quantum Technology LLC
    Inventors: Mariana Munteanu, Erol Girt
  • Publication number: 20080092946
    Abstract: Photovoltaic structures for the conversion of solar irradiance into electrical free energy. In particular implementations, the novel photovoltaic structures can be fabricated using low cost and scalable processes, such as magnetron sputtering. In a particular implementation, a photovoltaic cell includes a photoactive conversion layer comprising one or more granular semiconductor and oxide layers with nanometer-size semiconductor grains surrounded by a matrix of oxide. The semiconductor and oxide layer can be a disposed between electrode layers. In some implementations, multiple semiconductor and oxide layers can be deposited. These so-called semiconductor and oxide layers absorb sun light and convert solar irradiance into electrical free energy.
    Type: Application
    Filed: October 24, 2007
    Publication date: April 24, 2008
    Applicant: Applied Quantum Technology LLC
    Inventors: Mariana Munteanu, Erol Girt