Abstract: A method and apparatus for activating and dissociating gases involves generating an activated gas with a plasma located in a chamber. A downstream gas input is positioned relative to an output of the chamber to enable the activated gas to facilitate dissociation of a downstream gas introduced by the gas input, wherein the dissociated downstream gas does not substantially interact with an interior surface of the chamber.

Abstract: A material processing apparatus having an integrated toroidal plasma source is described. The material processing apparatus includes a plasma chamber that comprises a portion of an outer surface of a process chamber. A transformer having a magnetic core surrounds a portion of the plasma chamber. The transformer has a primary winding. A solid state AC switching power supply comprising one or more switching semiconductor devices is coupled to a voltage supply and has an output that is coupled to the primary winding. The solid state AC switching power supply drives an AC current in the primary winding that induces an AC potential inside the chamber that directly forms a toroidal plasma that completes a secondary circuit of the transformer and dissociates the gas.

Abstract: A method for controlling a plasma used for materials processing includes generating a power for forming an electronegative plasma, detecting a signal that is related to a parameter of the plasma, and modulating the power generated in response to the signal. Modulation of the power causes a reduction in an instability of the parameter of the plasma. An apparatus for controlling a materials processing electronegative plasma includes a signal detector for detecting a signal that is related to a parameter of the plasma, and a power modulator for causing a modulation of the power for forming the plasma in response to the signal.

Abstract: The invention features an RF plasma generator. The RF plasma generator includes a variable frequency RF generator, comprising an H-bridge and an RF output. The RF generator generates electromagnetic radiation having a power. The RF plasma generator further includes a matching network that includes at least one variable impedance component. The matching network also includes a first port that is electromagnetically coupled to the output of the RF generator and a second port. The RF plasma generator also includes a load that is electromagnetically coupled to the second port of the matching network, and a plasma chamber for containing a plasma having a power. The plasma chamber is electromagnetically coupled to the load and receives electromagnetic radiation having a power from the load. Adjusting at least one of the frequency of the RF generator and the variable impedance component in the matching network changes the power in the plasma.

Abstract: Plasma ignition and cooling apparatus and methods for plasma systems are described. An apparatus can include a vessel and at least one ignition electrode adjacent to the vessel. A total length of a dimension of the at least one ignition electrode is greater than 10% of a length of the vessel's channel. The apparatus can include a dielectric toroidal vessel, a heat sink having multiple segments urged toward the vessel by a spring-loaded mechanism, and a thermal interface between the vessel and the heat sink. A method can include providing a gas having a flow rate and a pressure and directing a portion of the flow rate of the gas into a vessel channel. The gas is ignited in the channel while the remaining portion of the flow rate is directed away from the channel.

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: The invention features RF plasma generation systems, methods for operating the systems, methods for calibrating the systems, and calibration apparatus. One RF plasma generation system includes an impedance matching network having an input port to receive an RF signal from an RF generator, and an output port to deliver the RF signal to an input port of a plasma vessel associated with a load. The system includes an RF signal probe in electromagnetic communication with the input port of the impedance matching network to detect at least one RF signal parameter associated with the RF signal at the input port of the impedance matching network. The system can include a calibration storage unit that stores calibration data. The calibration data includes an association of values of the RF signal parameter with values of at least one characteristic of the load.

Abstract: The invention features an apparatus and a method for supplying ozonated water to more than one process tool. Ozonated water of a first concentration received from an ozonated water generator and water received from a source are mixed to produce ozonated water of a second concentration. The ozonated water of a second concentration is supplied to a first process tool. Ozonated water from the ozonated water generator is supplied to a second process tool while supplying the ozonated water of the second concentration to the first process tool.

Abstract: Apparatus for dissociating gases includes a plasma chamber comprising a gas. A first transformer having a first magnetic core surrounds a first portion of the plasma chamber and has a first primary winding. A second transformer having a second magnetic core surrounds a second portion of the plasma chamber and has a second primary winding. A first solid state AC switching power supply including one or more switching semiconductor devices is coupled to a first voltage supply and has a first output that is coupled to the first primary winding. A second solid state AC switching power supply including one or more switching semiconductor devices is coupled to a second voltage supply and has a second output that is coupled to the second primary winding. The first solid state AC switching power supply drives a first AC current in the first primary winding. The second solid state AC switching power supply drives a second AC current in the second primary winding.

Abstract: The invention features an apparatus and a method for supplying ozonated water to more than one process tool. Ozonated water of a first concentration received from an ozonated water generator and water received from a source are mixed to produce ozonated water of a second concentration. The ozonated water of a second concentration is supplied to a first process tool. Ozonated water from the ozonated water generator is supplied to a second process tool while supplying the ozonated water of the second concentration to the first process tool.

Abstract: The invention relates to a method and system for cleaning semiconductor elements accommodated in a tank which uses ozonized, deionized (DI) ultrapure water. According to the invention, ozone is generated in an ozone generator (3) according to the principal of silent electric discharge while admitting highly pure oxygen. Said ozone is fed to a contactor (7) through which DI water flows. The ozone is then dissolved in the DI water. While optionally admitting additional chemicals, the ozonized DI water is conducted through the tank (12) holding the semiconductor elements in order to clean the same, and the used DI water is carried away (15). In order to stabilize the ozone concentration, CO2 is added to the ozone/oxygen mixture generated by the ozone generator (7).

Abstract: The invention features RF plasma generation systems, methods for operating the systems, methods for calibrating the systems, and calibration apparatus. One RF plasma generation system includes an impedance matching network having an input port to receive an RF signal from an RF generator, and an output port to deliver the RF signal to an input port of a plasma vessel associated with a load. The system includes an RF signal probe in electromagnetic communication with the input port of the impedance matching network to detect at least one RF signal parameter associated with the RF signal at the input port of the impedance matching network. The system can include a calibration storage unit that stores calibration data. The calibration data includes an association of values of the RF signal parameter with values of at least one characteristic of the load.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: A method for controlling a plasma used for materials processing includes generating a power for forming an electronegative plasma, detecting a signal that is related to a parameter of the plasma, and modulating the power generated in response to the signal. Modulation of the power causes a reduction in an instability of the parameter of the plasma. An apparatus for controlling a materials processing electronegative plasma includes a signal detector for detecting a signal that is related to a parameter of the plasma, and a power modulator for causing a modulation of the power for forming the plasma in response to the signal.

Abstract: The invention features an apparatus and a method for supplying ozonated water to more than one process tool. Ozonated water of a first concentration received from an ozonated water generator and water received from a source are mixed to produce ozonated water of a second concentration. The ozonated water of a second concentration is supplied to a first process tool. Ozonated water from the ozonated water generator is supplied to a second process tool while supplying the ozonated water of the second concentration to the first process tool.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: An improved toroidal low-field plasma source allows plasma ignition within a wider range of gas conditions than permitted by prior art plasma sources. Power efficiency of the plasma source is improved by automatically adjusting the power delivered to the plasma based on the load to the power supply. The plasma source can be operated over a wider pressure range than allowed by prior art plasma sources. The plasma source can be operated so as to increase the output of atomic species from the source. The plasma source can be operated to increase the etch rate of organic materials. The plasma source can efficiently remove hazardous gas compounds from effluent gas streams by converting them into scrubbable products.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.

Abstract: An apparatus for dissociating gases includes a plasma chamber that may be formed from a metallic material and a transformer having a magnetic core surrounding a portion of the plasma chamber and having a primary winding. The apparatus also includes one or more switching semiconductor devices that are directly coupled to a voltage supply and that have an output coupled to the primary winding of the transformer. The one or more switching semiconductor devices drive current in the primary winding that induces a potential inside the chamber that forms a plasma which completes a secondary circuit of the transformer.