Abstract: A high efficiency solar cell comprises: (a) a germanium substrate having a front surface and a back surface; (b) a back-metal contact on the back surface of the germanium substrate; (c) a first semiconductor cell comprising (1) a GaAs p-n junction formed from an n-GaAs and a p-GaAs layer, the n-GaAs layer formed on the front surface of the n-germanium substrate, and (2) a p-(Al,Ga)As window layer, the p-(Al,Ga)As window layer formed on the p-GaAs layer; (d) a tunnel diode comprising a GaAs p.sup.+ -n.sup.+ junction formed from a p.sup.+ -GaAs layer and an n.sup.+ -GaAs layer, the p.sup.+ -GaAs layer formed on the p-(Al,Ga)As window layer; and (e) a second semiconductor cell comprising (1) a (Ga,In)P p-n junction formed from an n-(Ga,In)P layer and a p-(Ga,In)P layer, the n(Ga,In)P layer formed on the n.sup.

Abstract: An optically isolated laser diode array is formed by growing a quantum well layer on a substrate after a plurality of strips are placed on the substrate. As the lattice of the quantum well of layer grows over the strips, it deforms the lattice structure of such layer causing it to be optically lossy in the regions above the strips. An insulative layer may then be deposited on the quantum well layer and patterned so that electrical contact may be made to the quantum well layer active regions which are disposed between each of the strips. In these active regions, the quantum well layer lattice structure is well formed to provide high quality active regions for laser diodes.

Abstract: A mounting module for a laser diode array has a microchannel heat sink assembly and a circulation means for flowing a cooling fluid to and from the microchannel heat sink so as to dissipate heat. The microchannel heat sink has a plurality of internal microchannels, and has an external planar surface to affix laser diode submounts which facilitate attachment of laser emitting bars. The circulation mans comprises a housing having canals which circulate the cooling fluid. The housing has an external surface to which an electrical distribution means is placed, the distribution means providing electrical power to the laser diode array.

Abstract: A semiconductor laser diode has a short period substantially intrinsic superlattice structure. The superlattice is constructed from alternating layers of substantially intrinsic direct and indirect semiconductor material. Semiconductor electrodes, one being p-type and the other being n-type, are each formed adjacent a respective opposite lateral surface of the superlattice. The electrodes are biased to inject carriers into the superlattice. At the top and bottom surfaces of the superlattice, a semiconductor layer is formed, one layer being n-type and the other being p-type. These layers are biased by an intermittent voltage to develop an intermittent field across the superlattice. This field transforms the indirect material to direct material. The recombination of carriers in the quantum well when the material becomes direct develops optical radiation to be emitted.

Abstract: A gallium-arsenide solar cell has a germanium substrate cut at a special angle, with its surface generally perpendicular to the 001 axis, but tilted by about six to fifteen degrees toward the direction generally about half-way between the 011 and the 111 axial directions. To avoid the cascade effect the junction with the substrate may be passivated or photovoltaically inhibited by initiating vapor deposition of GaAs at a temperature below 700.degree. C. and rapidly ramping the temperature up to normal vapor deposition temperatures. Poisoning of the GaAs layer by germanium may be prevented inexpensively by using a silicon dioxide coating on one side of the germanium substrate.

Abstract: A transmitter and receiver for "MILES" type systems is in a pistol type configuration, and is provided with a display, to indicate the mode of the controller unit, as well as the specific MILES codes which are transmitted or received. The versatile unit is particularly flexible in its ability to test the various components of Multiple Integrated Laser Engagement System, with "MILES" being the acronym for these combat training exercise systems. A continuous rotary control switch determines the mode, either (1) transmit, (2) receive, or (3) identity change. In the transmit mode, rotation of the switch will change the transmitted MILES code, and actuation of the trigger switch will transmit the MILES code and an associated identity code. In the identity change mode, operating the trigger switch will change the I.D. number of the "player". In the receive mode, the display will show the received MILES code, and the player identity number.

Abstract: High quantum efficiency photodiode device having a pair of photodiodes with light receiving surfaces in parallel spaced relation in a closed cavity. Light is admitted to the cavity through an aperture in such manner that it impinges obliquely upon the light receiving surfaces and is reflected back and forth between the diodes until absorbed. A mirror positioned at the end of the diodes opposite the aperture reflects impinging thereon back to the photodiodes.

Abstract: A protected solar cell including a monolithic bypass diode is formed by adding an additional layer of semiconductive material having a type opposite to the outermost semiconductive layer of a solar cell, and the resultant additional layer is cut back to form a small area bypass diode, which is subsequently connected across the solar cell by integrated circuit metallization techniques. The solar cell may be formed of gallium arsenide with the underlying semiconductive material being n-type gallium arsenide, and forming a junction with a thin layer of p-type gallium arsenide covered with a window of p-type aluminum gallium arsenide. The bypass diode is initially formed of a supplemental layer of n-type gallium arsenide, and by sucessive etching processes, an island is formed extending downward from a small area of n-type gallium arsenide through the two p-type layers.

Abstract: Photodiode structure and method of manufacturing the same, wherein the photodiode has a combination of very high shunt resistance and exceptionally low capacitance with only a slight loss in sensitivity. The diode junction is formed by a narrow line, and the geometry of the device can take many forms. The device has a typical shunt resistance of 150 megohms and a typical capacitance of 80 picofarads for an equivalent photosensitive area of 1 cm.sup.2, which cannot be achieved by current standard technology.