Patents Assigned to Applied Spintadnics, Inc.
  • Highly efficient segmented word line MRAM array
    Patent number: 7184302
    Abstract: In an MRAM array based on MTJs, the size of segmented word line select transistors and their associated connections become a significant overhead, especially when the operating point is chosen deep along the hard axis of the asteroid curve. This problem has been overcome by placing the big segmented word line select transistors under the MTJ array and reducing the overall MRAM cell array down to a level comparable to a simple Cross Point MRAM array.
    Type: Grant
    Filed: March 30, 2005
    Date of Patent: February 27, 2007
    Assignees: Headway Technologies, Inc., Applied Spintadnics, Inc.
    Inventors: Hsu Kai Yang, Po-Kang Wang, Xizeng Shi