Patents Assigned to Appplied Materials, Inc.
  • Patent number: 7767024
    Abstract: In one embodiment, a method for removing native oxides from a substrate surface is provided which includes supporting a substrate containing silicon oxide within a processing chamber, generating a plasma of reactive species from a gas mixture within the processing chamber, cooling the substrate to a first temperature of less than about 65° C. within the processing chamber, and directing the reactive species to the cooled substrate to react with the silicon oxide thereon while forming a film on the substrate. The film usually contains ammonium hexafluorosilicate. The method further provides positioning the substrate in close proximity to a gas distribution plate, and heating the substrate to a second temperature of about 100° C. or greater within the processing chamber to sublimate or remove the film. The gas mixture may contain ammonia, nitrogen trifluoride, and a carrier gas.
    Type: Grant
    Filed: June 6, 2008
    Date of Patent: August 3, 2010
    Assignee: Appplied Materials, Inc.
    Inventors: Chien-Teh Kao, Jing-Pei (Connie) Chou, Chiukin (Steven) Lai, Sal Umotoy, Joel M. Huston, Son Trinh, Mei Chang, Xiaoxiong (John) Yuan, Yu Chang, Xinliang Lu, Wei W. Wang, See-Eng Phan
  • Patent number: 7601631
    Abstract: The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liable groups with nitrous oxide, oxygen, ozone, or other source of reactive oxygen in gas-phase plasma-enhanced reaction. The deposited silicon oxide based film is annealed to form dispersed microscopic voids that remain in a nano-porous silicon oxide based film having a low-density structure. The nano-porous silicon oxide based films are useful for forming layers between metal lines with or without liner or cap layers. The nano-porous silicon oxide based films may also be used as an intermetal dielectric layer for fabricating dual damascene structures.
    Type: Grant
    Filed: June 16, 2006
    Date of Patent: October 13, 2009
    Assignee: Appplied Materials, Inc.
    Inventor: Robert P. Mandal
  • Patent number: 6291793
    Abstract: The invention is embodied in a coil antenna for radiating RF power supplied by an RF source into a vacuum chamber of an inductively coupled plasma reactor which processes a semiconductor wafer in the vacuum chamber, the reactor having a gas supply inlet for supplying processing gases into the vacuum chamber, the coil antenna including plural concentric spiral conductive windings, each of the windings having an interior end near an apex of a spiral of the winding and an outer end at a periphery of the spiral of the winding, and a common terminal connected to the interior ends of the plural concentric spiral windings, the RF power source being connected across the terminal and the outer end of each one of the windings.
    Type: Grant
    Filed: September 2, 1999
    Date of Patent: September 18, 2001
    Assignee: Appplied Materials, Inc.
    Inventors: Xue-Yu Qian, Arthur H. Sato