Abstract: A semiconductor chip pad structure and a method for manufacturing the same, wherein a flat area at the center of the terminal pad and a roughened area at the periphery thereof are provided by use of the mask photolithograph technique and the roughening process. The central area provides a sufficient adhering force for the ball bond while the peripheral area prevents the wire-bonding vibrating energy from the lateral transmission to the external side of the terminal pad. In this way, the ball bond for the terminal pad may meet the wire-bonding requirements. Moreover, the ball bond quality is ensured.

Abstract: An LED die structure and a method for manufacturing the bottom terminal of the LED die structure, wherein the LED die includes a substrate, a light-emitting layer positioned at the top of the substrate, at least one bottom terminal positioned at the bottom of the substrate, at least one top terminal positioned at the top of the light-emitting layer, and at least one side terminal positioned at the side of the bottom of the substrate, and wherein the method comprises the following steps: a) recessing the bottom side of the wafer to a predetermined height when the LED is formed in a wafer type; b) coating the metal material to the bottom of the wafer and to the inside of the recesses; and c) dividing the wafer along the recesses into dies. In this way, the bottom terminal and the side terminal are formed at the bottom of the substrate of the die. Moreover, the LED die structure enhances the quality of the electric connection between the die-bonding paste and the LED die.

Abstract: A semiconductor chip pad structure and a method for manufacturing the same, wherein a flat area at the center of the terminal pad and a roughened area at the periphery thereof are provided by use of the mask photolithograph technique and the roughening process. The central area provides a sufficient adhering force for the ball bond while the peripheral area prevents the wire-bonding vibrating energy from the lateral transmission to the external side of the terminal pad. In this way, the ball bond for the terminal pad may meet the wire-bonding requirements. Moreover, the ball bond quality is ensured.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: The main objective of present invention is to provide a manufacturing method of light emitting diode that utilizes metal diffusion bonding technology. AlInGaP light emitting diode epitaxial structure on a temporary substrate is bonded to a permanent substrate having a thermal expansion coefficient similar to that of the epitaxial structure, and then the temporary substrate is removed to produce an LED having a vertical structure and better performance. The other objective of the present invention is to provide a high performance LED that uses metal diffusion technology and wet chemical etching technology to roughen the LED surface in order to improve light extraction efficiency.

Abstract: An LED flat lamp including a housing with a light-emitting area at the bottom thereof. The internal side thereof undergoes a reflexion treatment. At least one LED is disposed within the housing. A power connector is extended from the LED to the outside. The LED is installed on a circuit board. A light guide plate is installed at one side of the LED within the housing. The light exit side of the light guide plate is provided with a microstructure for a uniform light exit. Moreover, an optical film unit is attached to the bottom of the light guide plate such that the light-emitting area of the housing is covered with the optical film unit. The optical film unit consists of one or several brightness enhancement films and one or several diffusers. In this way, the problem of glaring light directly emitted by the prior art is resolved. The LED flat lamp in accordance with the invention can emit a non-glaring light and can be modularized into a standardized product.

Abstract: The present invention discloses a display module using blue-ray or ultraviolet-ray light sources to excite RGB fluorescent powders to emit light, which comprises a light guide plate, at least one blue-ray or ultraviolet-ray light source, a diffuser plate, a liquid crystal layer and a fluorescent-powder excited layer. The blue-ray or ultraviolet-ray light sources emit a short-wavelength light with the wavelength ranging from 360 to 460 nm; the light guide plate will guide the short-wavelength light to the diffuser plate; the diffuser plate will further diffuse the short-wavelength light; the diffused short-wavelength light will pass through the liquid crystal layer and reach the fluorescent-powder excited layer where the short-wavelength light excites the fluorescent powder to emit light. The excited layer has multiple grids where RGB fluorescent elements are disposed, and each grid has only one single-color fluorescent element.

Abstract: The present invention discloses a laser dicing apparatus for a gallium arsenide wafer and a method thereof, wherein firstly, a gallium arsenide wafer is stuck onto a holding film; next, the gallium arsenide wafer together with the holding film is disposed on a working table; the gallium arsenide wafer has multiple chips or dice with a scribed line drawn between every two chips; a control device and an object lens are used to position the working table and a laser, and two video devices are used to observe whether the laser has been precisely aimed at one of the scribed lines; after parameters have been input into the control device, the laser is used to cut the gallium arsenide wafer, and the gallium arsenide wafer is then separated into multiple discrete chips or dice. The present invention can precisely cut gallium arsenide wafers, reduce the cost and accelerate the fabrication process.

Abstract: This invention is about a window interface layer in a light-emitting diode which comprises an n-type GaAs substrate with an n-type ohmic electrode at the bottom side thereof; an n-type AlGaInP cladding layer formed atop the substrate; an undoped AlGaInP active layer formed atop the n-type cladding layer; a p-AlGaInP cladding layer formed atop the active layer; a p-type window layer made of GaP; a p-type ohmic electrode formed atop the p-type window layer; and a highly doped p-type interface layer made of GaxIn1-xP (0.6?x?0.9) and interposed between the p-type cladding layer and p-type window layer wherein the highly doped p-GaInP interface layer possesses a band gap which is higher than that of the active layer and, however, smaller than that of the p-type cladding layer, and wherein the lattice constant lies between GaAs and GaP.

Abstract: A laser diode device of package not greater than 5.6 mm, having an automatic power control circuit directly mounted in a heat sink (or a submount) inside the metal cap thereof to substitute for an external circuit board for driving by voltage instead of current.

Abstract: A laser diode module with a built-in high-frequency modulation IC used to remove the reflected noise generated as the laser beam reads the signal to be played back and directly packaged within a metal cap. The high-frequency modulation IC creates an electrical connection through wire bonding with several connection legs and the laser diode module. The packaged laser diode module has four connection legs. Two of these connection legs act as a positive and a negative terminal for supplying power to the built-in high-frequency modulation IC. The other two connection legs are electrically connected to an external automatic power control (APC) circuit and act as the positive terminal of the laser diode and the photo diode, respectively. In this way, the inconvenience of externally attaching a high-frequency current producing circuit board can be avoided, the productivity can be enhanced and the radiation of electromagnetic interference (EMI) can be reduced.

Abstract: A new transparent conducting oxide (TCO), which can be expressed as AlxGa3-x-yIn5+ySn2-zO16-2z; 0?x<1, 0<y<3, 0?z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al2O3—Ga2O3—In2O3—SnO2 system is able to increase the brightness at 1.5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.

Abstract: The invention provides a method and device for light generation wherein the device comprises a lower electrode, a substrate formed on the lower electrode, a triangle mesa structure formed on the substrate for lateral confinement of light, a triangle optical cavity formed in the mesa structure, an upper electrode formed on the mesa structure, and a plurality of contact spots formed on the upper electrode corresponding to the maxima of optical field intensity for at least one optical mode on a lateral plane in the triangle optical cavity. Another embodiment of the device according to the invention further comprises a plurality of triangle mesa structures, along with a light output structure for directing and controlling light output from the device, which are formed on the substrate in various topologies such as a matrix or an array.

Abstract: A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, and forming a first electrode and a second electrode on the multi-layered semiconductor structure and the metal substrate respectively.

Abstract: The invention provides a method and device for light generation wherein an embodiment of the device comprises a lower electrode, a conducting substrate formed on the lower electrode, and a triangle mesa structure having an optical cavity formed on the substrate. The triangle mesa structure (which can also be truncated) further comprises an active layer, a lower conducting mirror and an upper conducting mirror for vertical confinement of light in the optical cavity, a contact layer formed on the upper mirror, a metallic contact formed on the contact layer. An electrical current is applied to the device according to the invention through the metallic contact linked to the contact layer, and subsequently to the lower electrode through the lower mirror and the conducting substrate. The applied current results in light generation in the active layer with vertical light output through the metallic contact. A corresponding light generation method is also disclosed herein.

Abstract: A method for manufacturing the light emitting diode utilizing the metal substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a multi-layered semiconductor structure on the growing substrate, bonding a metal substrate to the multi-layered semiconductor structure, removing the growing substrate, and forming a first electrode and a second electrode on the multi-layered semiconductor structure and the metal substrate respectively.

Abstract: A method for manufacturing the light emitting diode utilizing the transparent substrate and the metal bonding technology is provided. The method includes steps of providing a growing substrate, forming a semiconductor structure on the growing substrate, forming a metal bonding layer on the semiconductor structure, bonding a transparent substrate to the semiconductor structure via the metal bonding layer, removing the growing substrate, and forming a first electrode and a second electrode on the semiconductor structure and the transparent substrate respectively.

Abstract: A mobile communication device comprises a housing enclosing a circuit board that has components disposed thereon. The housing has opposite first and second surfaces. An antenna element is formed on the first surface of the housing for receiving and/or transmitting electromagnetic signals. An inner conductive layer is disposed on the second surface of the housing. The inner conductive layer is electrically connected to the antenna element and in signal communication with the circuit board.

Abstract: A semiconductor laser having an emitting wavelength is disclosed. The semiconductor laser having an emitting wavelength includes plural quantum well groups respectively having quantized energy levels wherein the quantized energy levels are mutually different. The emitting wavelength of the semiconductor laser is set in one of the plural quantum well groups having a relatively high quantized energy level for reducing a temperature effect on the semiconductor laser.

Abstract: A method for fabricating a light emitting diode with transparent substrate. The method comprises forming a first type cladding layer on a substrate, forming an active layer on the first type cladding layer, forming a second type cladding layer on the active layer, forming a second type transparent semiconductor layer on the second type cladding layer to serve as the transparent substrate, removing the substrate, and forming a first type contact layer on the surface of the first type cladding layer previously connected to the substrate. The transparent substrate does not absorb the emitted light, thereby the light emitting efficiency is increased by as much as double, and thus the performance of opto-electronic devices is improved.