Patents Assigned to ARRAY PHOTONICS, INC.
  • Short wavelength infrared optoelectronic devices having a dilute nitride layer
    Patent number: 11271122
    Abstract: Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 ?m.
    Type: Grant
    Filed: March 9, 2020
    Date of Patent: March 8, 2022
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Radek Roucka, Sabeur Siala, Aymeric Maros, Ting Liu, Ferran Suarez, Evan Pickett
  • Monolithic multijunction power converter
    Patent number: 11233166
    Abstract: Resonant cavity power converters for converting radiation in the wavelength range from 1 micron to 1.55 micron are disclosed. The resonant cavity power converters can be formed from one or more lattice matched GaInNAsSb junctions and can include distributed Bragg reflectors and/or mirrored surfaces for increasing the power conversion efficiency.
    Type: Grant
    Filed: July 24, 2019
    Date of Patent: January 25, 2022
    Assignee: ARRAY PHOTONICS, INC.
    Inventor: Ferran Suarez Arias
  • Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions
    Patent number: 11211514
    Abstract: Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.
    Type: Grant
    Filed: March 5, 2020
    Date of Patent: December 28, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Ferran Suarez, Ding Ding, Aymeric Maros
  • Electronic devices having displays with infrared components behind the displays
    Patent number: 11146745
    Abstract: An electronic device having a display with an infrared component (such as a camera, a light source) behind the display. The layer of the display is transparent to infrared light at which the infrared component operates. Infrared sensing functions, when implemented by the component, may be accomplished by transmission of infrared light through the layer of the display, thereby removing the conventional need for cut-outs or holes in the display plane and maximizing the display area.
    Type: Grant
    Filed: March 6, 2020
    Date of Patent: October 12, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Sabeur Siala, Philip Dowd
  • Hydrogen diffusion barrier for hybrid semiconductor growth
    Patent number: 10991835
    Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.
    Type: Grant
    Filed: August 8, 2019
    Date of Patent: April 27, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Aymeric Maros, Ferran Suarez, Jacob Thorp, Michael Sheldon, Ting Liu
  • Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar cells
    Patent number: 10930808
    Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: February 23, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Ferran Suarez, Ting Liu, Arsen Sukiasyan, Ivan Hernandez, Jordan Lang, Radek Roucka, Sabeur Siala, Aymeric Maros
  • High efficiency multijunction photovoltaic cells
    Patent number: 10916675
    Abstract: Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.
    Type: Grant
    Filed: February 22, 2019
    Date of Patent: February 9, 2021
    Assignee: ARRAY PHOTONICS, INC.
    Inventors: Ferran Suarez, Ting Liu, Homan B. Yuen, David Taner Bilir, Arsen Sukiasyan, Jordan Lang
  • SHORT WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING GRADED OR STEPPED DILUTE NITRIDE ACTIVE REGIONS
    Publication number: 20200295221
    Abstract: Semiconductor optoelectronic devices having a dilute nitride active region are disclosed. In particular, the semiconductor devices have a dilute nitride active region with at least two bandgaps within a range from 0.7 eV and 1.4 eV. Photodetectors comprising a dilute nitride active region with at least two bandgaps have a reduced dark current when compared to photodetectors comprising a dilute nitride active region with a single bandgap equivalent to the smallest bandgap of the at least two bandgaps.
    Type: Application
    Filed: March 5, 2020
    Publication date: September 17, 2020
    Applicant: ARRAY PHOTONICS, INC.
    Inventors: FERRAN SUAREZ, DING DING, AYMERIC MAROS
  • SHORT WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING A DILUTE NITRIDE LAYER
    Publication number: 20200212237
    Abstract: Semiconductor optoelectronic devices having a dilute nitride active layer are disclosed. In particular, the semiconductor devices have a dilute nitride active layer with a bandgap within a range from 0.7 eV and 1 eV. Photodetectors comprising a dilute nitride active layer have a responsivity of greater than 0.6 A/W at a wavelength of 1.3 ?m.
    Type: Application
    Filed: March 9, 2020
    Publication date: July 2, 2020
    Applicant: ARRAY PHOTONICS, INC.
    Inventors: RADEK ROUCKA, SABEUR SIALA, AYMERIC MAROS, TING LIU, FERRAN SUAREZ, EVAN PICKETT
  • HYDROGEN DIFFUSION BARRIER FOR HYBRID SEMICONDUCTOR GROWTH
    Publication number: 20200052137
    Abstract: Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride active layer and at least one semiconductor material overlying the dilute nitride active layer are disclosed. Hybrid epitaxial growth and the use of hydrogen diffusion barrier layers to minimize hydrogen diffusion into the dilute nitride active layer are used to fabricate high-efficiency multijunction solar cells and photonic devices. Hydrogen diffusion barriers can be formed through the use of layer thickness, composition, doping and/or strain.
    Type: Application
    Filed: August 8, 2019
    Publication date: February 13, 2020
    Applicant: ARRAY PHOTONICS, INC.
    Inventors: AYMERIC MAROS, FERRAN SUAREZ, JACOB THORP, MICHAEL SHELDON, TING LIU