Abstract: The present invention provides antimicrobial compositions, especially compositions comprising an antimicrobial (microbiocidal or microbiostatic) compound and a potentiator of antimicrobial activity. Compositions of the invention combining an antimicrobial compound and a potentiator are able to kill or inhibit the growth of microorganisms using much lower concentrations of the antimicrobial compound. The potentiator also enhances the efficacy of antimicrobial compounds against resistant strains of the microorganism.

Abstract: A Trigonopsis variabilis transformed with a recombinant DNA containing a D-amino acid oxidase gene capable of expressing in Trigonopsis variabilis is provided. A process for transforming Trigonopsis variabilis and a process for preparing 7-.beta.-(5-carboxy-5-oxopenetaneamide)cephalosporanic acid by using a transformant of Trigonopsis variabilis are also provided. The transformant of Trigonopsis variabilis shows high DAO activity and low activity of an esterase which interferes with the preparation of cephalosporin C. Accordingly, the Trigonopsis variabilis of the present invention enables one to produce cephalosporin C.Moreover, the Trigonopsis variabilis of the present invention can be used for the preparation or cephalosporin C merely by treating the cells with toluene so that large scale use is practical.

Abstract: The present invention is a method of fabrication of a thin film of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) having no lattice disorder, and its use in a sensor layer to obtain a high sensitivity semiconductor sensor having excellent temperature characteristics. The semiconductor sensor has a high resistance first compound semiconductor layer, a layer of In.sub.x Ga.sub.1-x As.sub.y Sb.sub.1-y (0<x.ltoreq.1.0, 0.ltoreq.y.ltoreq.1.0) grown on this first layer, and an electrode formed on this layer. The first compound semiconductor layer has a lattice constant the same as or nearly the same as that of the crystal of the sensor layer, and a band gap energy greater than that of the crystal. A second compound semiconductor layer similar to the first compound semiconductor layer may be formed on top of the sensor layer. A manufacturing method of such a semiconductor sensor is also included.

Abstract: A system for recording and reproducing information using Fourier transform holography wherein original information to be recorded as holograms is divided into a number of groups each including N(N .gtoreq.2) information units, each unit including a given amount of information. This information is recorded by a holographic technique on a track or tracks of a record medium as a series of holograms from a plurality of unit-information input positions, or from a single unit-information input position when a reference light having a plurality of incident angles is used. In reproducing, the images either analog or digital are reproduced such that images reproduced from adjacent holograms in the series of holograms on the track appear at, at least two different positions on an image plane of a reproducing system such as pickup tubes or a photodiode array.