Abstract: Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least two of five elements of Al, Ga, In, As and P, and an active layer composed of InxGa1-xAsySb1-y (0.8?x?1.0, 0.8?y?1.0), which are stacked. Compared with the active layer, the first and second compound semiconductor layers each have a wider band gap, and a resistance value five times or more greater. The lattice constant differences between the active layer and the first and second compound semiconductor layers are each designed in a range of 0.0-1.2%, and the thickness of the active layer is designed in a range of 30-100 nm.

Abstract: A Hall device of the present invention includes a cross-shaped magnetometric sensing surface, a pair of power terminal portions and a pair of output terminal portions. The surface is formed of a rectangular and mutually opposed extensions provided on each side of the rectangular. The pair of power terminal portions is provided on a pair of the opposed extensions at the surface. The pair of output terminal portions is provided on another pair of the opposed extensions at the surface. Slits extending in each opposed direction completely split the power portions and the output portions and in partway split each extension at the surface, and each of the slits is provided with a separation layer of an insulator. An outline formed of the surface, the power portions and the output portions is quadrature-symmetrical with the center. The Hall device of this structure is highly sensitive to a magnetic field.

Abstract: A ultrathin magnetoelectric transducer and its manufacturing method are provided which enable the quality of mounting to be inspected nondestructively, and can reduce a footprint. The magnetoelectric transducer has a substrate composed of a nonmagnetic substrate, and includes bottom surface connecting electrodes whose leads have a first thickness, and side electrodes which are exposed by dicing and have the first thickness. A more sensitive Hall element has a high-permeability magnetic substrate as the substrate, and includes the bottom surface connecting electrodes whose leads have the first thickness, and the side electrodes exposed by the dicing and having the first thickness. The bottom surface connecting electrodes of the leads with the first thickness are formed across the internal electrodes of adjacent magnetoelectric transducers with maintaining the first thickness. The side electrodes with the first thickness are formed by cutting the center between the adjacent magnetoelectric transducers.

Abstract: A current sensor according to the present invention is provided with a U-shaped conductor through which current under measurement flows, a magnetic sensor disposed between two straight portions parallel to each other both of which form the U-shaped conductor, a magnetic material of surrounding shape which surrounds the two straight portions and the magnetic sensor and includes a convex opposed to the magnetic sensor and a supporting member for supporting the conductor, the magnetic sensor and the magnetic material so as to position ends of the conductor and terminals of the magnetic sensor at the same side with respect to the magnetic material.

Abstract: A semiconductor Hall sensor can reduce measuring error due to an unbalanced voltage by decreasing the unbalanced voltage, and improve resistance to electrostatic by suppressing maximum electric field in the sensor. A cross-shaped pattern of the semiconductor Hall sensor includes cutouts at its concave corners. Among the four concave corners of the cross-shaped pattern, consecutive two or four concave corners are provided with the cutouts. Besides, among the four concave corners of the cross-shaped patterns, the consecutive two or four concave corners have an acute angle at the intersection of the input terminal side pattern and output terminal side pattern. The semiconductor Hall sensor becomes insensitive to defects or unbalance of its pattern, thereby being able to reduce the unbalanced voltage as compared with a conventional cross-shaped pattern of the semiconductor Hall sensor.

Abstract: A wrinkle-free organic film having a high light transmittance and a uniform film thickness is obtained by forming an organic thin film on the surface of a substrate having a contact angle of the surface to water of 90° or higher, followed by peeling the film therefrom.

Abstract: The present invention provides a thin magnetoelectric transducer which has a projected size substantially equal to that of a pellet and which can be subjected to an inspection test nondestructively. The magnetoelectric transducer has a semiconductor device provided on the upper surface of a projecting portion of a projecting nonmagnetic insulating substrate 9 and comprising a magnetosensitive section 3 and inner electrodes 2 made of metal. A conductive resin layer 4 is formed on the internal electrodes 2 and on part of the side surfaces of the projecting portion. A strain buffering layer 5 is formed at least on the magnetosensitive section 3. Furthermore, at least the strain buffering layer 5 on the magnetosensitive section 3 is coated with a protective layer 6.

Abstract: A magnetic sensor with a signal processing circuit includes a magnetic sensor section 4 composed of a compound semiconductor thin film or a magnetic thin film, and a signal processing circuit 5 for amplifying a magnetic signal the magnetic sensor section detects as an electrical output. The signal processing circuit 5 includes an operational amplifier 51 and a constant current circuit 52 for carrying out feedback. The constant current circuit 52 in the signal processing circuit 5 includes a plurality of resistors with two or more different temperature coefficients, and the current output from the constant current circuit has a temperature coefficient inversely proportional to the temperature coefficient of the combined resistance of the plurality of the resistors.

Abstract: A wrinkle-free organic film having a high light transmission and a uniform film thickness is obtained by forming an organic thin film on the surface of a substrate having a contact angle of the surface to water of 90° or higher followed by peeling the film therefrom.

Abstract: An electric current detecting apparatus having gaps in a looped core and a primary winding and a secondary winding around the looped core. The gaps have continuous portions in the looped core. A magnetoelectric transducer such as a Hall effect element is inserted into at least one of the gaps. The gaps and the secondary windings have the same dimension as well as the same shape and are symmetrically arranged to reduce damping oscillation and transient spike noise of the secondary current I2. The continuous portion prevents increase of magnetic reluctance of the core. The electric current detecting apparatus has good high frequency response characteristics and detects a large current of a square wave pulse at a high speed and with high fidelity.