Abstract: Disclosed are a method for manufacturing a homojunction or heterojunction bipolar device and a structure of the bipolar device manufactured by the method.

Abstract: Disclosed are a method for forming a base layer by epitaxial growth technology of a heterojunction bipolar device and a structure of the bipolar device manufactured by the method.

Abstract: The present invention is related to a bipolar transistor in which the in-situ doped epitaxial Si or SiGe base layer is used instead of using an ion-implanted Si base, in order to achieve higher cutoff frequency. The SiGe base having the narrower energy bandgap than the Si emitter allows to enhance the current gain, the cutoff frequency(fT), and the maximum oscillation frequency (fmax). The narrow bandgap SiGe base also allows to have higher base doping concentration. As a result, the intrinsic base resistance is lowered and the noise figure is thus lowered. Parasitic base resistance is also minimized by using a metallic silicide base ohmic electrode. The present invention is focused on low cost, high repeatability and reliability by simplifying the manufacturing process step.

Abstract: The present invention is related to a bipolar transistor in which the in-situ doped epitaxial Si or SiGe base layer is used instead of using an ion-implanted Si base, in order to achieve higher cutoff frequency. The SiGe base having the narrower energy bandgap than the Si emitter allows to enhance the current gain, the cutoff frequency (fT), and the maximum oscillation frequency (fmax). The narrow bandgap SiGe base also allows to have higher base doping concentration. As a result, the intrinsic base resistance is lowered and the noise figure is thus lowered. Parasitic base resistance is also minimized by using a metallic silicide base ohmic electrode. The present invention is focused on low cost, high repeatability and reliability by simplifying the manufacturing process step.