Abstract: A plasma deposition apparatus includes a vacuum chamber, and a workpiece assembly that includes a frame that can hold a plurality of workpieces, and gas channels formed in between the workpieces and the frames. The gas channels can transport gas from a gas source to the plurality of workpieces to produce material deposition on the workpieces. The workpiece assembly can form a cylinder in the vacuum chamber.

Abstract: A plasma deposition apparatus includes a first plasma source that can produce a plasma confined in a magnetic field. The first plasma source includes a closed-loop electrode defining a center region therein and a central axis through the central region, and one or more magnets that are outside an inner surface of the closed-loop electrode. The magnets can produce a magnetic field in the center region. The one or more magnets can be at least partially embedded in the closed-loop electrode. The closed-loop electrode and the magnets can produce a plasma of ions to sputter atoms off a sputtering target or a backing plate.

Abstract: A plasma deposition apparatus includes a first plasma source that can produce a first plasma confined in a magnetic field, which includes: a gas distribution device configured to supply a gas, a closed-loop electrode defining a center region therein and a central axis through the central region and one or more magnets that are outside an inner surface of the closed-loop electrode. The one or more magnets can produce the magnetic field in the center region. The closed-loop electrode and the one or more magnets can produce the first plasma of activated atoms, molecules, electrons, and ions from the gas. A collimator can collimate the activated atoms, molecules, electrons, and ions produced by the first plasma source and direct the ions to a substrate.

Abstract: A high throughput deposition apparatus includes a process chamber, a plurality of targets that form a first closed loop in the process chamber, wherein the first closed loop includes a long dimension defined by at least a first pair of targets and a short dimension defined by at least a second pair of targets, a first substrate carrier assembly that can hold one or more substrates and configured to receive a deposition material from the plurality of targets in the first closed loop, and a transport mechanism that can move the first substrate carrier assembly along an axial direction through the first closed loop in the first process chamber.

Abstract: A method for substrate processing includes producing a magnetic field by a magnetron across the full width of a sputtering surface of a target in a first direction. The magnetron can produce two erosion grooves separated by a distance S on the sputtering surface. The method includes moving the magnetron continuously at a first speed by the distance S in a first segment along a linear travel path. The linear travel path is along a second direction perpendicular to the first direction. The method includes continuously sputtering a material off the sputtering surface and depositing the material on the substrate during the first segment, and moving the magnetron by the distance S in a second segment along the linear travel path at a second speed higher than the first speed without sputtering the material off the sputtering surface or sputtering materials off at significant lower rate.

Abstract: A substrate processing system includes a source unit configured to supply a deposition material to a substrate, a substrate holder configured to hold a substrate to receive the deposition material, a shadow mask comprising a frame that includes two opposing arms; and a crossbar configured to be mounted to the two opposing arms. The frame and the crossbar define a plurality of openings that allow the deposition material supplied by the source unit to be deposited on the substrate. A transport mechanism can produce relative movement between the shadow mask and the substrate.

Abstract: An apparatus for processing a work piece in a vacuum environment includes a master process chamber that can be exhausted to a sub-atmospheric air pressure or to be filled with a desirable gas, a transfer chamber configured to receive the work piece from outside of the master process chamber, one or more processing stations inside the master process chamber, a rotation plate configured to receive the work piece and to move the work piece to receive one or more processing operations, and a first transport mechanism configured to transfer the work piece from the transfer chamber on to the rotation plate. The transfer chamber is at least partially enclosed in the master process chamber and can be vacuum sealed off from the master process chamber.

Abstract: A substrate processing system includes a first load lock, a process chamber having a first opening to allow an exchange of a substrate between the first load lock and the first process chamber, first rollers in the process chamber; and second rollers in the first load lock, wherein the first rollers and the second rollers are configured to transport a substrate thereon through the first opening between the first load lock and the process chamber. The first rollers and the second rollers are not rotated by an active transport mechanism.

Abstract: A magnetron source for producing a magnetic field near a surface of a target in a deposition system include a first magnet, a second magnet separated by a gap from the first magnet along a first direction, and a target holder configured to hold the target in the gap between the first magnet and the second magnet. The target includes a sputtering surface from which target material can be sputtered and deposited on a substrate. The target holder is so configured that the sputtering surface is substantially parallel to the first direction and the first magnet and the second magnet can produce a magnetic field near a surface of the target.

Abstract: A deposition system includes a process chamber, a workpiece holder for holding the workpiece within the process chamber, a first target comprising a first material, a second target comprising a second material, a single magnet assembly disposed that can scan across the first target and the second target to deposit the first material and the second material on the workpiece, and a transport mechanism that can cause relative movement between the magnet assembly and the first target or the second target.

Abstract: An apparatus for processing a work piece in a vacuum environment includes a master process chamber configured to be exhausted to a sub-atmospheric air pressure or to be filled with a desirable gas, a transfer chamber configured to receive the work piece from outside of the master process chamber, one or more processing stations inside the master process chamber, a rotation plate configured to receive the work piece and to move the work piece to receive one or more processing operations, and a first transport mechanism configured to transfer the work piece from the transfer chamber on to the rotation plate. The transfer chamber is at least partially enclosed in the master process chamber and can be vacuum sealed off from the master process chamber.