Patents Assigned to ASM International
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Patent number: 11814400Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se—containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.Type: GrantFiled: July 23, 2021Date of Patent: November 14, 2023Assignee: ASM International N.V.Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
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Patent number: 11555242Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.Type: GrantFiled: July 2, 2019Date of Patent: January 17, 2023Assignee: ASM INTERNATIONAL N.V.Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
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Patent number: 11549177Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.Type: GrantFiled: December 10, 2019Date of Patent: January 10, 2023Assignee: ASM INTERNATIONAL, N.V.Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
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Patent number: 11339474Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.Type: GrantFiled: March 30, 2020Date of Patent: May 24, 2022Assignee: ASM International N.V.Inventors: Ernst Hendrik August Granneman, Leilei Hu
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Patent number: 11302527Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.Type: GrantFiled: August 20, 2020Date of Patent: April 12, 2022Assignee: ASM INTERNATIONAL N.V.Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Patent number: 11072622Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.Type: GrantFiled: May 8, 2019Date of Patent: July 27, 2021Assignee: ASM INTERNATIONAL N.V.Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä
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Patent number: 11056385Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: December 7, 2018Date of Patent: July 6, 2021Assignee: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
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Patent number: 10964534Abstract: Methods of producing metal-containing thin films with low impurity contents on a substrate by atomic layer deposition (ALD) are provided. The methods preferably comprise contacting a substrate with alternating and sequential pulses of a metal source chemical, a second source chemical and a deposition enhancing agent. The deposition enhancing agent is preferably selected from the group consisting of hydrocarbons, hydrogen, hydrogen plasma, hydrogen radicals, silanes, germanium compounds, nitrogen compounds, and boron compounds. In some embodiments, the deposition-enhancing agent reacts with halide contaminants in the growing thin film, improving film properties.Type: GrantFiled: May 14, 2019Date of Patent: March 30, 2021Assignee: ASM InternationalInventors: Antti Rahtu, Eva Tois, Kai-Erik Elers, Wei-Min Li
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Patent number: 10858738Abstract: A wafer boat cooldown device comprising a bottom plate and a rotatable table that is rotatable between a number of index positions. The rotatable table comprises at least two wafer boat positions for supporting a wafer boat. A vertically extending wall structure is mounted on the rotatable table and creates, at each wafer boat position, a wafer boat chamber having a gas supply area and a gas discharge area. The wafer boat cooldown device further comprises a plenum chamber which extends under the bottom plate. The plenum chamber accommodates at least one gas/liquid heat exchanger.Type: GrantFiled: March 27, 2019Date of Patent: December 8, 2020Assignee: ASM INTERNATIONAL N.V.Inventors: Chris G. M. de Ridder, Lucian C. Jdira, Bartholomeus Hans Louis Lindeboom
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Patent number: 10837107Abstract: A method of contactlessly advancing a substrate (140), comprising: —providing a process tunnel (102), extending in a longitudinal direction and bounded by at least a first (120) and a second (134) wall; —providing first and second gas bearings (124, 134) by providing substantially laterally flowing gas alongside the first and second walls respectively; —bringing about a first longitudinal division of the process tunnel into a plurality of pressure segments (116), wherein the gas bearings (124, 34) in a pressure segment have an average gas pressure that is different from an average gas pressure of the gas bearings in an adjacent pressure segment; —providing a substrate (140) in between the first wall (120) and the second wall (130); and 1—allowing differences in average gas pressure between adjacent pressure segments (116) to drive the substrate along the longitudinal direction of the process tunnel.Type: GrantFiled: July 6, 2011Date of Patent: November 17, 2020Assignee: ASM INTERNATIONAL N.V.Inventors: Ernst Hendrik August Granneman, Vladimir Kuznetsov
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Patent number: 10784105Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.Type: GrantFiled: December 4, 2019Date of Patent: September 22, 2020Assignee: ASM International N.V.Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Patent number: 10738382Abstract: A substrate processing apparatus (100) comprising a process tunnel (102) including a lower tunnel wall (122), an upper tunnel wall (142), and two lateral tunnel walls (128), said tunnel walls being configured to bound a process tunnel space (104) that extends in a longitudinal transport direction (7) and that is suitable for accommodating at least one substantially planar substrate (180) oriented parallel to the upper and lower tunnel walls (122, 142), the process tunnel being divided in a lower tunnel body (120) comprising the lower tunnel wall and an upper tunnel body (140) comprising the upper tunnel wall, which tunnel bodies (120, 140) are separably joinable to each other along at least one longitudinally extending join (160), such that they are mutually movable between a closed configuration in which the tunnel walls (122, 128, 142) bound the process tunnel space (104) and an open configuration that enables lateral maintenance access to an interior of the process tunnel.Type: GrantFiled: March 18, 2014Date of Patent: August 11, 2020Assignee: ASM INTERNATIONAL N.V.Inventors: Ernst Hendrik August Granneman, Pieter Tak
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Patent number: 10707082Abstract: Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.Type: GrantFiled: June 15, 2012Date of Patent: July 7, 2020Assignee: ASM International N.V.Inventors: Suvi Haukka, Viljami J. Pore, Antti Niskanen
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Patent number: 10699899Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.Type: GrantFiled: August 20, 2018Date of Patent: June 30, 2020Assignee: ASM International N.V.Inventors: Raija H. Matero, Linda Lindroos, Hessel Sprey, Jan Willem Maes, David de Roest, Dieter Pierreux, Kees van der Jeugd, Lucia D'Urzo, Tom E. Blomberg
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Patent number: 10648078Abstract: An atomic layer deposition apparatus, having a first series of high pressure gas injection openings and a first series of exhaust openings that are positioned such that they together create a first high pressure/suction zone within each purge gas zone, wherein each first high pressure/suction zone extends over substantially the entire width of the process tunnel and wherein the distribution of the gas injection openings that are connected to the second purge gas source and the distribution of the gas exhaust openings within the first high pressure/suction zone, as well as the pressure of the second purge gas source and the pressure at the gas exhaust openings are such that the average pressure within the first high pressure/suction zone deviates less than 30% from a reference pressure which is defined by the average pressure within process tunnel when no substrate is present.Type: GrantFiled: November 3, 2015Date of Patent: May 12, 2020Assignee: ASM INTERNATIONAL N.V.Inventors: Ernst Hendrik August Granneman, Leilei Hu
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Patent number: 10553440Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.Type: GrantFiled: June 20, 2016Date of Patent: February 4, 2020Assignee: ASM International N.V.Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
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Patent number: 10513772Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.Type: GrantFiled: October 14, 2010Date of Patent: December 24, 2019Assignee: ASM International N.V.Inventors: Tom E. Blomberg, Eva E. Tois, Robert Huggare, Jan Willem Maes, Vladimir Machkaoutsan, Dieter Pierreux
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Patent number: 10510530Abstract: The present disclosure relates to the deposition of dopant films, such as doped silicon oxide films, by atomic layer deposition processes. In some embodiments, a substrate in a reaction space is contacted with pulses of a silicon precursor and a dopant precursor, such that the silicon precursor and dopant precursor adsorb on the substrate surface. Oxygen plasma is used to convert the adsorbed silicon precursor and dopant precursor to doped silicon oxide.Type: GrantFiled: November 15, 2018Date of Patent: December 17, 2019Assignee: ASM International N.V.Inventors: Noboru Takamure, Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano, Kunitoshi Namba
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Patent number: 10344378Abstract: Methods are provided herein for forming transition metal oxide thin films, preferably Group IVB metal oxide thin films, by atomic layer deposition. The metal oxide thin films can be deposited at high temperatures using metalorganic reactants. Metalorganic reactants comprising two ligands, at least one of which is a cycloheptatriene or cycloheptatrienyl (CHT) ligand are used in some embodiments. The metal oxide thin films can be used, for example, as dielectric oxides in transistors, flash devices, capacitors, integrated circuits, and other semiconductor applications.Type: GrantFiled: May 18, 2017Date of Patent: July 9, 2019Assignee: ASM International N.V.Inventors: Timo Hatanpaa, Jaakko Niinisto, Mikko Ritala, Markku Leskela, Suvi Haukka
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Patent number: 10308673Abstract: Atomic layer deposition (ALD) processes for forming Te-containing thin films, such as Sb—Te, Ge—Te, Ge—Sb—Te, Bi—Te, and Zn—Te thin films are provided. ALD processes are also provided for forming Se-containing thin films, such as Sb—Se, Ge—Se, Ge—Sb—Se, Bi—Se, and Zn—Se thin films are also provided. Te and Se precursors of the formula (Te,Se)(SiR1R2R3)2 are preferably used, wherein R1, R2, and R3 are alkyl groups. Methods are also provided for synthesizing these Te and Se precursors. Methods are also provided for using the Te and Se thin films in phase change memory devices.Type: GrantFiled: September 21, 2017Date of Patent: June 4, 2019Assignee: ASM International N.V.Inventors: Viljami Pore, Timo Hatanpaa, Mikko Ritala, Markku Leskelä