Abstract: Methods for depositing silicon oxide in a batch reactor are provided. In some embodiments, a plurality of vertically separated substrates is provided in a reaction chamber. Tetraethyl orthosilicate (TEOS) is pulsed into the reaction chamber by direct liquid injection. Ozone is flowed into the reaction chamber simultaneously or alternately with the TEOS. The deposition is performed at about 10 Torr or less to extend the mean free path length of the ozone molecules. According to some embodiments, the deposition allows openings in the substrates to be filled while the occurrence of voids is maintained at a low level.

Abstract: An interactive electronic equipment document production system is disclosed. Documents from different sources are standardized in a conversion process, provided with tags in a tagging process that provides information connecting an initial locating with another location and are evaluated in a building process where tags and tag information are evaluated. Though the use of associated files, CAD files and generic pictures can be provided with tags and links without modifying the actual CAD file or generic picture.

Abstract: A handheld device for use in a wireless environment to operate an apparatus is provided. The handheld device sends a request to an apparatus controller to initiate a maintenance sequence. The handheld device receives information from the apparatus controller to control the operation of the maintenance sequence. The handheld device sends a maintenance command to the apparatus controller. The handheld device then receives information regarding the state of the apparatus after the maintenance command is executed.

Abstract: A method and system for the processing of one or more wafers in a process tool is provided, the method comprising subjecting the one or more wafer in a reaction chamber to a process, generating an inhibit next load flag on predefined conditions, the inhibit next load flag not effecting already started processing of a wafer. Prior to the start of the processing of a wafer, a check is performed to see if an inhibit next load flag has been set. When upon checking it has been found that an inhibit next load has been set, the start of the process in the reaction chamber is prohibited. The method further includes providing pre-programmed recovery procedures, such that after execution of a pre-programmed recovery procedure the to be processed wafer of which the start of the processing is prohibited ends in a defined state such that the tool can be used for further processing.

Abstract: A system for processing semiconductor wafers includes adaptations allowing the selective handling of cassettes for both 200-mm wafers and 300-mm wafers. The system is configured initially for handling standard 300-mm FOUP cassettes. Adaptions for handling 200-mm wafer open cassettes include a load port adapter frame for receiving such cassettes on a input/output platform; a cassette handler adapter configured for reversibly mounting on a cassette handler end effector and for receiving 200-mm open cassettes; a store adapter frame for converting 300-mm FOUP storage compartments into compartments for storing 200-mm open cassettes; and a Transhipment FOUP for holding 200-mm open cassettes upon a cassette transfer platform and bringing such cassettes into an interface with a wafer handler. The Transhipment FOUP has outer surfaces resembling a standard 300-mm FOUP cassette, but is configured to receive a 200-mm open cassette therein.

Abstract: A method for graphically representing the progress of wafers being processed in a plurality of process stations is disclosed. In one step, the start of a process performed on the wafers in one of the plurality of process stations is determined. Then, the generation of a first line segment parallel to a first axis is initiated. Next, the end of the process in one of the plurality of process stations is determined. Then the generation of the first line segment parallel to the first axis is terminated. The start of a transfer of the wafers from one of the plurality of process stations to another one of the plurality of process stations is detected in a next step. Then, the formation of a second line segment connected with the first line segment and substantially perpendicular to the first axis is initiated. The completion of the transfer of the wafers is then determined and the formation of the second line segment perpendicular to the first axis is terminated.

Abstract: The present invention provides a method of fabricating a semiconductor device, which could advance the commercialization of semiconductor devices with a copper interconnect. In a process of metal interconnect line fabrication, a TiN thin film combined with an Al intermediate layer is used as a diffusion barrier on trench or via walls. For the formation, Al is deposited on the TiN thin film followed by copper filling the trench. Al diffuses to TiN layer and reacts with oxygen or nitrogen, which will stuff grain boundaries efficiently, thereby blocking the diffusion of copper successfully.

Abstract: This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing certain functional groups for the reduction of a metal oxide layer formed during the production of an integrated circuit. According to the present process the metal oxide layer is at least partly reduced to elemental metal with a reducing agent selected from organic compounds containing one or more of the following functional groups: alcohol (—OH), aldehyde (—CHO), and carboxylic acid (—COOH).

Abstract: The invention relates to a source chemical container assembly, comprising a metal container functioning as a vacuum chamber and provided with a removable closure, which removable closure seals against the metal container with a metal seal. In order to facilitate easy recharging of the container assembly, compressive force is applied to the metal seal through a tension chain. In a preferred embodiment of the invention the metal seal and the tension chain are provided along a circumference of said metal container. The assembly can comprise an inner container in which the source chemical is contained.

Abstract: A process for producing aluminum oxide thin films on a substrate by the ALD method comprises the steps of bonding a vaporizable aluminum compound to a growth substrate, and converting the bonded organoaluminum compound to aluminum oxide. The bonded aluminum compound is converted to aluminum oxide by contacting it with a reactive vapor source of oxygen other than water, and the substrate is kept at a temperature of less than 190° C. during the growth process. By means of the invention it is possible to produce films of good quality at low temperatures. The dielectric thin films having a dense structure can be used for passivating surfaces that do not endure high temperatures. Such surfaces include, for example, polymer films such as organic electroluminescent displays. Further, when a water-free oxygen source is used, surfaces that are sensitive to water can be passivated.

Abstract: The invention relates generally to improved silicon carbide deposition during dual damascene processing. In one aspect of the invention, copper oxide present on a substrate is reduced at least partially to copper prior to deposition of a silicon carbide or silicon oxycarbide layer thereon. In the preferred embodiment the reduction is accomplished by contacting the substrate with one or more organic reducing agents. The reduction process may be carried out in situ, in the same reaction chamber as subsequent processing steps. Alternatively, it may be carried out in a module of a cluster tool.

Abstract: A method of manufacturing a high performance MOS device and transistor gate stacks comprises forming a gate dielectric layer over a semiconductor substrate; forming a barrier layer over the gate dielectric layer by an ALD type process; and forming a gate electrode layer over the barrier layer. The method enables the use of hydrogen plasma, high energy hydrogen radicals and ions, other reactive radicals, reactive oxygen and oxygen containing precursors in the processing steps subsequent to the deposition of the gate dielectric layer of the device. The ALD process for forming the barrier layer is performed essentially in the absence of plasma and reactive hydrogen radials and ions. This invention makes it possible to use oxygen as a precursor in the deposition of the metal gates. The barrier film also allows the use of hydrogen plasma in the form of either direct or remote plasma in the deposition of the gate electrode.

Abstract: The present invention concerns a process for depositing rare earth oxide thin films, especially yttrium, lanthanum and gadolinium oxide thin films by an ALD process, according to which invention the source chemicals are cyclopentadienyl compounds of rare earth metals, especially those of yttrium, lanthanum and gadolinium. Suitable deposition temperatures for yttrium oxide are between 200 and 400° C. when the deposition pressure is between 1 and 50 mbar. Most suitable deposition temperatures for lanthanum oxide are between 160 and 165° C. when the deposition pressure is between 1 and 50 mbar.

Abstract: Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.

Abstract: A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.

Abstract: A process for growing an electrically conductive metalloid thin film on a substrate with a chemical vapor deposition process. A metal source material and a reducing agent capable of reducing the metal source material to a reduced state are vaporized and fed into a reaction space, where the metal source material and the reducing agent are contacted with the substrate. The reducing agent is a boron compound having at least one boron-carbon bond, and the boron compound forms gaseous by-products when reacted with the metal source material. Generally, the boron compound is an alkylboron compound with 0-3 halogen groups attached to the boron. The metal source material and the reducing agent may be fed continuously or in pulses during the deposition process.

Abstract: Method and structures are provided for conformal capacitor dielectrics over textured silicon electrodes for integrated memory cells. Capacitor structures and first electrodes or plates are formed above or within semiconductor substrates. The first electrodes include hemispherical grain (HSG) silicon for increasing the capacitor plate surface area. The HSG topography is then exposed to alternating chemistries to form monolayers of a desired dielectric material. Exemplary process flows include alternately pulsed metal organic and oxygen source gases injected into a constant carrier flow. Self-terminated metal layers are thus reacted with oxygen. Near perfect step coverage allows minimal thickness for a capacitor dielectric, given leakage concerns for particular materials, thereby maximizing the capacitance for the memory cell and increasing cell reliability for a given memory cell design.

Abstract: This invention concerns a method for modifying a source material used in an ALD process, a method for depositing transition metal nitride thin films by an ALD process and apparatus for use in such process. According to the present invention transition metal source materials are reduced by vaporizing a metal source material, conducting the vaporized metal source material, into a reducing zone comprising a solid reducing agent maintained at an elevated temperature. Thereafter, the metal source material is contacted with the solid or liquid reducing agent in order to convert the source material into a reduced metal compound and reaction byproducts having a sufficiently high vapor pressure for transporting in gaseous form.

Abstract: A method and system for the processing of one or more wafers in a process tool is provided, the method comprising subjecting the one or more wafer in a reaction chamber to a process, generating an inhibit next load flag on predefined conditions, the inhibit next load flag not effecting already started processing of a wafer. Prior to the start of the processing of a wafer, a check is performed to see if an inhibit next load flag has been set. When upon checking it has been found that an inhibit next load has been set, the start of the process in the reaction chamber is prohibited. The method further includes providing pre-programmed recovery procedures, such that after execution of a pre-programmed recovery procedure the to be processed wafer of which the start of the processing is prohibited ends in a defined state such that the tool can be used for further processing.

Abstract: A handheld device for use in a wireless environment to operate an apparatus is provided. The handheld device sends a request to an apparatus controller to initiate a maintenance sequence. The handheld device receives information from the apparatus controller to control the operation of the maintenance sequence. The handheld device sends a maintenance command to the apparatus controller. The handheld device then receives information regarding the state of the apparatus after the maintenance command is executed.